Crystallization of Si(1-yCy Films by Excimer Laser Annealing: Characterization of the Microstructure of the Films

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
J. L. Stehle ◽  
E. Fogarassy ◽  
J. J. Grob ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Carbide Formation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Excimer Laser Annealing ◽  
Lattice Contraction ◽  
Complex Behaviour ◽  
Before And After

AbstractEpitaxial Si(1-y)Cy substitutional alloy layers are prepared on monocrystalline silicon substrates by carbon multiple energy ion implantation followed by XeCl excimer laser annealing on large surfaces. Structural analysis of the films before and after laser annealing are made very precisely using spectroscopie ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behaviour is observed with partial (or total) relaxation of the layer and/or carbide formation‥

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Characterization of excimer laser annealing of ion implanted Si

1982 ◽  
Vol 3 (10) ◽  
pp. 280-283 ◽  
Author(s):  
R.T. Young ◽  
G.A. van der Leeden ◽  
J. Narayan ◽  
W.H. Christie ◽  
R.F. Wood ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
E. Fogarassy ◽  
D. Dentel ◽  
JJ. Grob ◽  
B. Prévot ◽  
J.P. Stoquert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Initial Dose ◽  
Laser Annealing ◽  
Film Formation ◽  
Silicon Substrates ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
First Time

AbstractWe investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

scholarly journals Characterization of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing.

Shinku ◽  
1999 ◽  
Vol 42 (8) ◽  
pp. 741-748 ◽  
Author(s):  
Naoto MATSUO ◽  
Hiroki HAMADA ◽  
Youichiro AYA ◽  
Tomoyuki NOUDA ◽  
Tadaki MIYOSHI
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Characterization of boron carbon nitride film modified by excimer laser annealing

2007 ◽  
Vol 254 (2) ◽  
pp. 596-599 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Kazutoshi Ohyama ◽  
Hiroshi Sota ◽  
Toshiaki Seino ◽  
Chiharu Kimura ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Carbon Nitride ◽  
Laser Annealing ◽  
Nitride Film ◽  
Excimer Laser Annealing ◽  
Carbon Nitride Film ◽  
Boron Carbon Nitride ◽  
Boron Carbon

Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing

2013 ◽  
Vol 750-752 ◽  
pp. 946-951
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Rong Xue Li ◽  
Chao Liu ◽  
Jian Jun Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Excimer Laser Annealing ◽  
Before And After ◽  
Si Films ◽  
Polycrystalline Silicon Films

Selected area laser-annealed polycrystalline silicon (p-Si) thin films were prepared by a 248 nm excimer laser. 1 μm thick p-Si films with grain size less than 100 nm were deposited on SiO2substrate by chemical vapor deposition using atmospheric pressure (APCVD). Grain sizes before and after annealing was examined by scanning electron microscopy (SEM) and the mechanism of grain growth was discussed in detail. The maximum grain size of a selected area laser-annealed p-Si film can be increased from 100 nm up to 2.9 μm on SiO2substrate by using appropriate laser energy densities. It indicated that silicon grains in laser-annealed regions had grown up competitively with three stages.

scholarly journals Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing.

Shinku ◽  
1998 ◽  
Vol 41 (9) ◽  
pp. 798-801 ◽  
Author(s):  
Naoto MATSUO ◽  
Yoichiro AYA ◽  
Takeshi KANAMORI ◽  
Tomoyuki NOUDA ◽  
Hiroki HAMADA ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Poly Silicon
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