Influence of Deposition Conditions of a-Si1-xCx on Film Composition Before and After Excimer Laser Annealing

2006 ◽  
Author(s):  
B. Garcia ◽  
M. Estrada
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Film Composition ◽  
Before And After ◽  
Deposition Conditions

Polycrystalline Silicon Films on SiO2 Substrate Treated by Excimer Laser Annealing

2013 ◽  
Vol 750-752 ◽  
pp. 946-951
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Rong Xue Li ◽  
Chao Liu ◽  
Jian Jun Lai ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Excimer Laser Annealing ◽  
Before And After ◽  
Si Films ◽  
Polycrystalline Silicon Films

Selected area laser-annealed polycrystalline silicon (p-Si) thin films were prepared by a 248 nm excimer laser. 1 μm thick p-Si films with grain size less than 100 nm were deposited on SiO2substrate by chemical vapor deposition using atmospheric pressure (APCVD). Grain sizes before and after annealing was examined by scanning electron microscopy (SEM) and the mechanism of grain growth was discussed in detail. The maximum grain size of a selected area laser-annealed p-Si film can be increased from 100 nm up to 2.9 μm on SiO2substrate by using appropriate laser energy densities. It indicated that silicon grains in laser-annealed regions had grown up competitively with three stages.

Crystallization of Si(1-yCy Films by Excimer Laser Annealing: Characterization of the Microstructure of the Films

1996 ◽  
Vol 452 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
J. L. Stehle ◽  
E. Fogarassy ◽  
J. J. Grob ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Carbide Formation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Excimer Laser Annealing ◽  
Lattice Contraction ◽  
Complex Behaviour ◽  
Before And After

AbstractEpitaxial Si(1-y)Cy substitutional alloy layers are prepared on monocrystalline silicon substrates by carbon multiple energy ion implantation followed by XeCl excimer laser annealing on large surfaces. Structural analysis of the films before and after laser annealing are made very precisely using spectroscopie ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behaviour is observed with partial (or total) relaxation of the layer and/or carbide formation‥

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Reduction of the size of the implanted silver nanoparticles in float glass during excimer laser annealing

1998 ◽  
Vol 136 (4) ◽  
pp. 298-305 ◽  
Author(s):  
A.L Stepanov ◽  
D.E Hole ◽  
A.A Bukharaev ◽  
P.D Townsend ◽  
N.I Nurgazizov
Keyword(s):  
Silver Nanoparticles ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Float Glass ◽  
Excimer Laser Annealing

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number
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