scholarly journals Characterization of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing.

Shinku ◽  
1999 ◽  
Vol 42 (8) ◽  
pp. 741-748 ◽  
Author(s):  
Naoto MATSUO ◽  
Hiroki HAMADA ◽  
Youichiro AYA ◽  
Tomoyuki NOUDA ◽  
Tadaki MIYOSHI
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Characterization of excimer laser annealing of ion implanted Si

1982 ◽  
Vol 3 (10) ◽  
pp. 280-283 ◽  
Author(s):  
R.T. Young ◽  
G.A. van der Leeden ◽  
J. Narayan ◽  
W.H. Christie ◽  
R.F. Wood ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

2006 ◽  
Vol E89-C (10) ◽  
pp. 1460-1464 ◽  
Author(s):  
W. XIANYU ◽  
H. S.-y. CHO ◽  
J. Y. KWON ◽  
H. YIN ◽  
T. NOGUCHI
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing

2002 ◽  
Vol 33 (1) ◽  
pp. 57 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser
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