Chemical Vapor Deposition and Properties of Amorphous Aluminum Oxide Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Roy G. Gordon ◽  
Keith Kramer ◽  
Xinye Liu

AbstractFilms of amorphous aluminum oxide were deposited from vaporized alkylaluminum alkoxide compounds and oxygen. For example, a gaseous mixture of triethyldialuminum tri-sec-butoxide vapor and dry air deposits amorphous aluminum oxide films on substrates heated to temperatures around 400 °C. Transparent, smooth, adherent films of aluminum oxide were formed on silicon, glass and metal substrates. The new precursors display a number of advantages over previously used sources for aluminum oxide. They are non-pyrophoric, low-viscosity, low-cost liquids. High deposition rates, over 0.2 μm/min, were observed. The coatings have high purity, high electrical resistivity and high transparency to light. They are excellent barriers to diffusion of water and of ions, such as sodium. These films are useful in optical coatings, as wear-resistant hard coatings, and as diffusion barriers that protect flat panel displays, computer microcircuits, solar cells and metals from corrosion and degradation by impurities.

Author(s):  
Hsiang-Yu Chan ◽  
Chisa Fukuda ◽  
Dogukan Yildirim ◽  
G. P. Li ◽  
Mark Bachman

1996 ◽  
Vol 424 ◽  
Author(s):  
J. Rodriguez-Viejo ◽  
B. O. Dabbousi ◽  
M. G. Bawendi ◽  
K. F. Jensen

Quantum dot composite films, consisting of II-VI nanocrystals imbedded in a ZnS matrix, are candidate phosphor materials for electroluminescent flat panel displays. The optical properties of such composites can be tailored across the visible spectral region by selecting the composition and size of the nanocrystals. We present combined solution chemistry and electrospray organometallic chemical vapor deposition (ES-OMCVD) methods for realizing such composites. Size selected, CdSe quantum dots with an overlayer of ZnS are synthesized in solution. This surface derivatization produces a large enhancement of the photoluminescence efficiency. The quantum dot composites are subsequently formed by introducing the quantum dot solution by electrospray into an OMCVD ZnS thin film process. Photoluminescence and cathodoluminescence properties of the quantum dot composites are reported.


1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.


1995 ◽  
Vol 383 ◽  
Author(s):  
Michael A. Tamor

ABSTRACTLow-friction/ultralow-wear coatings allow “surface engineering” for improved performance and durability, and enable use of new light weight or low cost materials. The accepted correlation of wear resistance with hardness suggests use of ceramic carbides and nitrides, with diamond being the ultimate anti-wear coating. While any of these may be deposited by chemical vapor deposition, the high cost (due to low deposition rates and high capital costs) and (usually) high deposition temperatures makes CVD coating impractical for cost-sensitive automotive applications. While rarely as hard as their crystalline counterparts, hard amorphous films exhibit similar (and occasionally superior) tribological properties and may be deposited on virtually any material at low cost. The highly nonequilibrium deposition process - conformal plasma reactive ion plating (CP-RIP) - allows tailoring of film properties and exploration of completely new compositions with no crystalline counterparts. Factors controlling the mechanical and optical properties of amorphous hard coatings, and recent progress in their application will be reviewed.


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