New multicomponent transparent conducting oxide films for transparent electrodes of flat panel displays

1996 ◽  
Vol 14 (3) ◽  
pp. 1689-1693 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shinzo Takata ◽  
Toshikazu Kakumu
2011 ◽  
Vol 264-265 ◽  
pp. 754-759 ◽  
Author(s):  
Bakri Jufriadi ◽  
Agus Geter E. Sutjipto ◽  
R. Othman ◽  
R. Muhida

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.


Author(s):  
Jongbum Kim ◽  
Yang Zhao ◽  
Aveek Dutta ◽  
Sajid M. Choudhury ◽  
Alexander V. Kildishev ◽  
...  

2004 ◽  
Vol 461 (2) ◽  
pp. 309-315 ◽  
Author(s):  
E.J.J Martin ◽  
M Yan ◽  
M Lane ◽  
J Ireland ◽  
C.R Kannewurf ◽  
...  

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2016 ◽  
Vol 27 (5) ◽  
pp. 4913-4922 ◽  
Author(s):  
M. Duta ◽  
M. Anastasescu ◽  
J. M. Calderon-Moreno ◽  
L. Predoana ◽  
S. Preda ◽  
...  

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