Electronic Defects in Metalorganic GaAIAs

1980 ◽  
Vol 2 ◽  
Author(s):  
N. M. Johnson ◽  
R. D. Burnham ◽  
D. Fekete ◽  
R. D. Yingling
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Thermal Activation Energy ◽  
Defect Level ◽  
Transient Capacitance ◽  
Electronic Defect ◽  
Electronic Defects

ABSTRACTElectronic defect levels have been measured in n-type epitaxial films of Gal - XAIXAs (0≤X≤0.33) which were grown by metalorganic chemical vapor deposition. Electron traps were characterized by transient capacitance spectroscopy on Schottky-barrier diodes. The thermal activation energy for electron emission from the near-midgap defect level is found to be larger in Ga1 - XAIXAs than the value of 0.83 eV generally observed in GaAs.

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