Interconnect Process Technology Using Perfluorocyclobutane (PFCB)

1996 ◽  
Vol 443 ◽  
Author(s):  
P. H. Townsend ◽  
E. O. Shaffer ◽  
M. E. Mills ◽  
J. Blackson ◽  
M. J. Radler
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Temperature ◽  
Spin Coating ◽  
Polymer Surface ◽  
Process Technology ◽  
Metal Fluorides ◽  
Film Dielectric ◽  
Highly Uniform ◽  
Thermo Physical Properties

AbstractA novel polymer dielectric derived from tris-perfluorocyclobutene(PFCB) monomer has been investigated as a thin film dielectric. The dielectric constant of this material has been measured at 2.35. PFCB is applied from a hydrocarbon solvated solution using conventional spin coating equipment onto the substrate and produces highly uniform films after curing at 300 °C.This paper describes the processing and properties of films derived from PFCB, and examines the interactions between the polymer and metals at the interfaces. In particular, the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 °C. The interface formed by the application of the polymer onto Ta is similarly unaffected by high temperatures. The interfaces formed by the deposition of Ta or Ti onto the polymer surface did not remain intact, with substantial quantities of the metals permeating the polymer after high temperature exposures. This behavior is discussed relative to the thermo-physical properties of the metal fluorides.

scholarly journals Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Shizuyasu Ochiai ◽  
Kumar Palanisamy ◽  
Santhakumar Kannappan ◽  
Paik-Kyun Shin
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Spin Coating ◽  
Dielectric Layer ◽  
Gate Dielectric ◽  
Low Cost ◽  
Vacuum Evaporation ◽  
Large Area ◽  
Process Technology ◽  
Active Channel

Pentacene OFETs of bottom-gate/bottom-contact were fabricated with three types of pentacene organic semiconductors and cross linked Poly(4-vinylphenol) or polycarbonate as gate dielectric layer. Two different processes were used to prepare the pentacene active channel layers: (1) spin-coating on dielectric layer using two different soluble pentacene precursors of SAP and DMP; (2) vacuum evaporation on PC insulator. X-ray diffraction studies revealed coexistence of thin film and bulk phase of pentacene from SAP and thin film phase of pentacene from DMP precursors. The field effect mobility of 0.031 cm2/Vs and threshold voltage of −12.5 V was obtained from OFETs fabricated from SAP precursor, however, the pentacene OFETs from DMP under same preparation yielded high mobility of 0.09 cm2/Vs and threshold value decreased to −5 V. It reflects that the mixed phase films had carrier mobilities inferior to films consisting solely of single phase. For comparison, we have also fabricated pentacene OFETs by vacuum evaporation on polycarbonate as the gate dielectric and obtained charge carrier mobilities as large as 0.62 cm2/Vs and threshold voltage of −8.5 V. We demonstrated that the spin-coated pentacene using soluble pentacene precursors could be alternative process technology for low cost, large area and low temperature fabrication of OFETs.

Recent Progress in Thin Film Multichip Packaging for High Temperature Digital Electronics

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000407-000412
Author(s):  
Kun Fang ◽  
Tami Isaacs-Smith ◽  
R. Wayne Johnson ◽  
Alexey Vert ◽  
Tan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Digital Circuit ◽  
Film Material ◽  
Active Components ◽  
Process Technology ◽  
Au Stud Bump ◽  
The Difference

A thin film material and process technology is being developed and evaluated for high temperature (300°C) digital multichip modules for use in geothermal well instrumentation. The substrate technology selected is AlN to minimize the difference in the coefficient of thermal expansion between the substrate and the SiC digital die. A thin film/plated Ti/Ti:W/Au metallization is used with a plasma enhanced chemical vapor deposited Si3N4 to create multilayer interconnections. Active components are assembled to the interconnect substrate using Au stud bump thermocompression bonding. The Au stud bump maintains a monometallic interface between the substrate Au pad surface and the Au pads on the SiC die. A digital circuit has been built and successfully tested as an initial demonstration.

Quantum-Dot Size and Thin-Film Dielectric Constant: Precision Measurement and Disparity with Simple Models

Nano Letters ◽  
2014 ◽  
Vol 15 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Darcy D. W. Grinolds ◽  
Patrick R. Brown ◽  
Daniel K. Harris ◽  
Vladimir Bulovic ◽  
Moungi G. Bawendi
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Quantum Dot ◽  
Precision Measurement ◽  
Film Dielectric ◽  
Simple Models

Synthesis and Characterization of Polymer Nanofoams

2007 ◽  
Vol 334-335 ◽  
pp. 821-824 ◽  
Author(s):  
Yi He Zhang ◽  
Y. Li ◽  
Hai Tao Huang ◽  
Sha Ming Ke ◽  
Li Hang Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Polyimide Film ◽  
Dielectric Constants ◽  
Low Dielectric ◽  
The Matrix ◽  
Poly Ethylene ◽  
Polyimide Matrix ◽  
A Minor ◽  
Film Dielectric

In order to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices, polyimide nanofoamed films has been prepared from the polyimide precursors (PMDA-ODA) and poly(ethylene oxide) (PEO) in N,N-dimethylacetamide. The synthesization process included blending polyimide as the major phase with a minor phase of the thermally labile PEO blocks. The foamed films were characterized by a variety of experiments including TG and SEM, and the experimental results indicated that the labile PEO would undergo oxidative thermolysis to release small moleculars from the matrix so as to leave voids into the polyimide matrix. The dielectric properties of the films were studied over broad frequency ranges. The dependences of dielectric constant on the PEO content in the films and frequency were discussed. The films with a proper amount of PEO displayed relatively low dielectric constant compared to the pure polyimide film. Thin film foams with high thermal stability and low dielectric constants can be prepared using the approach.

Dielectric Properties of PVDF/MgO Nanocomposites Thin Film with Various Annealing Temperatures

2013 ◽  
Vol 832 ◽  
pp. 718-723 ◽  
Author(s):  
Adillah Nurashikin Arshad ◽  
Rozana Mohd Dahan ◽  
Mohamad Hafiz Mohd Wahid ◽  
Muhamad Naiman Sarip ◽  
Habibah Zulkefle ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Spin Coating ◽  
Low Frequency ◽  
Tangent Loss ◽  
Unannealed Sample ◽  
Annealing Temperatures ◽  
Wide Range ◽  
Rapid Removal

Poly (vinylideneflouride)/nanomagnesium oxide (PVDF/MgO) nanocomposites with MgO loading percentage of 7% were annealed with various annealing temperatures ranging from 70oC to 170oC. The PVDF/MgO(7%) thin films were fabricated using spin coating technique with MIM structure. The dielectric constant of PVDF/MgO(7%) was studied over a wide range of annealing temperatures with rapid removal from the oven once the annealing was utilized. The nanocomposites thin films annealed at temperature of 70oC (AN70) shows an improvement in the dielectric constant of 23 at 103 Hz compared to unannealed sample (UN), which was 21 at the same frequency. However, as the annealing temperatures were increased from 90oC (AN90) to 170o C (AN170), the dielectric constant of PVDF/MgO(7%) were found to decrease from 16 to 7 respectively, which were lower than the UN thin films. AN70 also produced low value of tangent loss at low frequency˼˰˸̱̈́̾˰δ˹˰̴̷̹̹̳̱̹̾̈́̾˰̸̱̈́̈́˼˰̵̷̱̱̼̹̾̾̾˰̱̈́˰temperatures 70oC is favourable temperature used to improve the dielectric constant of PVDF/MgO(7%).

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