Recent Progress in Thin Film Multichip Packaging for High Temperature Digital Electronics

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000407-000412
Author(s):  
Kun Fang ◽  
Tami Isaacs-Smith ◽  
R. Wayne Johnson ◽  
Alexey Vert ◽  
Tan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Digital Circuit ◽  
Film Material ◽  
Active Components ◽  
Process Technology ◽  
Au Stud Bump ◽  
The Difference

A thin film material and process technology is being developed and evaluated for high temperature (300°C) digital multichip modules for use in geothermal well instrumentation. The substrate technology selected is AlN to minimize the difference in the coefficient of thermal expansion between the substrate and the SiC digital die. A thin film/plated Ti/Ti:W/Au metallization is used with a plasma enhanced chemical vapor deposited Si3N4 to create multilayer interconnections. Active components are assembled to the interconnect substrate using Au stud bump thermocompression bonding. The Au stud bump maintains a monometallic interface between the substrate Au pad surface and the Au pads on the SiC die. A digital circuit has been built and successfully tested as an initial demonstration.

Thin Film Multichip Packaging for High Temperature Digital Electronics

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000039-000045 ◽  
Author(s):  
Kun Fang ◽  
Rui Zhang ◽  
Tami Isaacs-Smith ◽  
R. Wayne Johnson ◽  
Emad Andarawis ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Integrated Circuits ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Electrical Characteristics ◽  
Passive Components ◽  
Interlayer Dielectric ◽  
Base Ceramic ◽  
Film Substrate

Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initial die shear results are presented.

Synthesis, Characterization and Application of Thin Film Carbon Nanotube Material

2000 ◽  
Vol 633 ◽  
Author(s):  
Alexander N. Obraztsov ◽  
Alexander P. Volkov
Keyword(s):  
Thin Film ◽  
Multiwall Carbon Nanotubes ◽  
Film Surface ◽  
Chemical Vapor ◽  
Film Material ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Low Field ◽  
Predominant Orientation ◽  
Graphite Basal Plane

AbstractThe non-catalytical chemical vapor deposition (CVD) method was used to grow carbon thin film material consisting of plate-like nanosized graphite crystallites and multiwall carbon nanotubes with predominant orientation of both species by their crystallographic plane, corresponding to a graphite basal plane, along a normal to the film surface. A number of experimental techniques was used for examination and characterization of the film phase composition, morphology, and electron properties peculiarities. Low-field electron emission with highly density of emission sites and emission current was obtained for the film material and allow to demonstrate their applicability for sealed prototypes of light-emitting devices.

Principles and Applications of Wafer Curvature Techniques for Stress Measurements in Thin Films

1988 ◽  
Vol 130 ◽  
Author(s):  
Paul A. Flinn
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Laser Scanning ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Film Material ◽  
Silicon Nitride Films ◽  
Stress Changes ◽  
Computer Controlled

AbstractMeasurement of the curvature induced in a wafer (or other flat plate) by the stress in a thin film has long been used as a convenient and accurate technique for the determination of the stress. Numerous improvements over the years have led to instruments that provide simple and rapid measurements of stress as a function of the time and temperature for any desired thermal history. A computer controlled instrument using laser scanning will be briefly described and its capabilities and limitations discussed.Applications of the technique to a variety of thin film materials will be discussed. In addition to the effects of differences in thermal expansion, stresses associated with various deposition techniques, gain or loss of material, phase transformations and flow will be considered. In aluminum based systems, themal expansion, plastic flow and phase transformation play major roles. Refractory metals show, in addition, large stresses associated with the deposition process. In inorganic dielectric systems thermal expansion effects are usually relatively small; deposition effects and the gain or loss of material are the dominant effects. Silica based glasses formed by chemical vapor deposition, for example, show large stress changes due to gain or loss of water, and plasma deposited silicon nitride films show large effects associated with hydrogen. Overall, determination of the stress as a function of time and temperature is a valuable part of the evaluation of a thin film material for use in a VLSI device.

Microwave Assisted Self-Propagating High-Temperature Synthesis for Joining SiC Ceramics and SiC/SiC Composites by Ni-Al System

2015 ◽  
Vol 727-728 ◽  
pp. 213-218 ◽  
Author(s):  
Shao Hua Han ◽  
Roberto Rosa ◽  
Valentina Casalegno ◽  
Milena Salvo ◽  
Paolo Veronesi ◽  
...  
Keyword(s):  
High Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Temperature Synthesis ◽  
Sic Ceramics ◽  
High Temperature Synthesis ◽  
Interface Bond Strength ◽  
Cte Mismatch ◽  
Sic Composites

Microwave has been applied to ignite the Self-propagating High-temperature Synthesis (SHS) of compacted Ni-Al mixtures, having 1:1 atomic ratio, in order to join Chemical Vapor Deposition (CVD) SiC ceramics and SiC/SiC composites. The average joint thickness of CVD SiC joint is about 200 μm and the Coefficient of Thermal Expansion (CTE) mismatch between CVD SiC and Ni-Al intermetallic compounds results in a interface bond strength inferior to that of the substrate and joining material; on the other hand, for the SiC/SiC composite joints, as a result of the porosity of SiC/SiC composites, the SHS products readily infiltrated into the pore spaces of the composite, leading to an increased porosity of the joint area and a better lower interface than the upper one. The mechanical strength of the joints has been evaluated by Single-Lap (SL) shear test at room temperature; neither of the ceramic joints nor the composites joint gave satisfactory results, but the ceramic joints reaching a maximum shear strength value of 56MPa exhibited a positive aspect for further experiments.

Stresses in Thin Film Multilayer Interconnect Structures

1992 ◽  
Vol 264 ◽  
Author(s):  
S. M. Bruck ◽  
D. B. Knorr
Keyword(s):  
Thin Film ◽  
Thermal Cycling ◽  
Coefficient Of Thermal Expansion ◽  
Mechanical Test ◽  
Polymer Materials ◽  
Stress Fields ◽  
Processing Temperature ◽  
Multilayer Thin Films ◽  
Individual Layer ◽  
The Difference

AbstractThe difference in coefficient of thermal expansion (CTE) between substrate, polymer, and metal leads to complicated stress fields in multilevel interconnect structures that can potentially compromise reliability. This study uses a materials set representative of the General Electric High Density Interconnect (HDI) multichip module technology to monitor the stress level in the thin film layers of metal and polymer. A Kapton HN® film is bonded to a substrate with heat and pressure using a thin layer of Ultem 1000® thermoplastic as an adhesive. Mechanical test structures consist of single or multilayer thin films fabricated on oxidized silicon or alumina substrates. Layers consist of Ultem, Ultem/Kapton, metal (Ti/Cu/Ti), and Ultem/Kapton/metal. The composite stress due to fabrication and thermal cycling between ambient and 275°C is determined by substrate deflection. The initial stress in the polymer materials is due to the thermal excursion during fabrication. Initial metal stress is intrinsic but becomes extrinsic upon thermal cycling. The composite stress in multilayer structures shows a contribution from each individual layer. The relatively low processing temperature minimizes the magnitude of the stress.

scholarly journals Гальваномагнитные свойства тонких пленок Bi-=SUB=-95-=/SUB=-Sb-=SUB=-5-=/SUB=- на подложках с различным температурным расширением

2018 ◽  
Vol 44 (11) ◽  
pp. 71
Author(s):  
В.М. Грабов ◽  
В.А. Комаров ◽  
Е.В. Демидов ◽  
А.В. Суслов ◽  
М.В. Суслов
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Substrate Material ◽  
Charge Carriers ◽  
Band Model ◽  
Film Material ◽  
Galvanomagnetic Properties ◽  
The Difference ◽  
Two Band Model

AbstractResults of an investigation of galvanomagnetic properties of Bi_95Sb_5 block thin films on substrates with different coefficients of thermal expansion covered with polyimide are presented. The difference between thermal expansions of the film material and the substrate was found to have a strong effect on the films’ galvanomagnetic properties. Analysis of the properties of the films using the two-band model showed that the concentration and mobility of the charge carriers in the Bi_95Sb_5 films are related to the coefficient of thermal expansion of the substrate material.

Study on Thermal Proof of SnO2 Protection Thin Film for Ultra High Reflective Film Ag System

2010 ◽  
Vol 2010 (1) ◽  
pp. 000458-000461 ◽  
Author(s):  
H. Miyagawa ◽  
R. Satoh ◽  
Y. Iwata ◽  
E. Morinaga ◽  
S. Kamo
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Active Material ◽  
Temperature Stability ◽  
High Heat ◽  
Film Material ◽  
Protective Film ◽  
High Temperature Stability ◽  
Sio2 Thin Film ◽  
Temperature Diffusion

Because it has longer life and uses much less power than filament lighting, LED is expected to be the next-generation lighting device. Moreover, taking advantage of its special properties, LED's are not limited to general lighting. There have been advances in the application of LED's to LCD's and car headlamps. To raise the luminosity efficiency of LED's, the metallic reflective film with the highest reflectivity is used. As a reflective film material, Ag has the highest reflectivity in the visual light range (400–800nm) and is used in many cases. However, Ag is a thermally active material and we have concerns about the decrease in reflectivity by aggregation and heat treatment sulfuration. In this study we investigate an ultra high heat proof protective film for a thin Ag reflective film. Conventionally, SiO2 thin film is used as a protective film for Ag reflective film, but it is difficult to obtain heat proofing > 473K. In this research we consider a SnO2 protective film which combines high heat proofing and high crystallinity. We formed a SnO2 protective film on an Ag thin film under various conditions, and investigated its heat proofing characteristics. We succeeded in obtaining ultra-high heat proofing exceeding 773K using several 10 nm protective film. Furthermore, in trying to understand the mechanism of this outstanding high heat proofing reflective film system, it became clear that the crystallinity in high temperature diffusion plays a major role. In addition, we have found the possible beginnings of a general theory for high temperature stability for nanotechnology.

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