Enhancement of the TiO[sub 2] Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

2009 ◽  
Vol 12 (3) ◽  
pp. H77 ◽  
Author(s):  
Dae-Kwon Joo ◽  
Jin-Seong Park ◽  
Sang-Won Kang
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Film Dielectric

Quantum-Dot Size and Thin-Film Dielectric Constant: Precision Measurement and Disparity with Simple Models

Nano Letters ◽  
2014 ◽  
Vol 15 (1) ◽  
pp. 21-26 ◽  
Author(s):  
Darcy D. W. Grinolds ◽  
Patrick R. Brown ◽  
Daniel K. Harris ◽  
Vladimir Bulovic ◽  
Moungi G. Bawendi
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Quantum Dot ◽  
Precision Measurement ◽  
Film Dielectric ◽  
Simple Models

Synthesis and Characterization of Polymer Nanofoams

2007 ◽  
Vol 334-335 ◽  
pp. 821-824 ◽  
Author(s):  
Yi He Zhang ◽  
Y. Li ◽  
Hai Tao Huang ◽  
Sha Ming Ke ◽  
Li Hang Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Polyimide Film ◽  
Dielectric Constants ◽  
Low Dielectric ◽  
The Matrix ◽  
Poly Ethylene ◽  
Polyimide Matrix ◽  
A Minor ◽  
Film Dielectric

In order to obtain thin film dielectric layers with very low dielectric constants for use in microelectronic devices, polyimide nanofoamed films has been prepared from the polyimide precursors (PMDA-ODA) and poly(ethylene oxide) (PEO) in N,N-dimethylacetamide. The synthesization process included blending polyimide as the major phase with a minor phase of the thermally labile PEO blocks. The foamed films were characterized by a variety of experiments including TG and SEM, and the experimental results indicated that the labile PEO would undergo oxidative thermolysis to release small moleculars from the matrix so as to leave voids into the polyimide matrix. The dielectric properties of the films were studied over broad frequency ranges. The dependences of dielectric constant on the PEO content in the films and frequency were discussed. The films with a proper amount of PEO displayed relatively low dielectric constant compared to the pure polyimide film. Thin film foams with high thermal stability and low dielectric constants can be prepared using the approach.

Interconnect Process Technology Using Perfluorocyclobutane (PFCB)

1996 ◽  
Vol 443 ◽  
Author(s):  
P. H. Townsend ◽  
E. O. Shaffer ◽  
M. E. Mills ◽  
J. Blackson ◽  
M. J. Radler
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Temperature ◽  
Spin Coating ◽  
Polymer Surface ◽  
Process Technology ◽  
Metal Fluorides ◽  
Film Dielectric ◽  
Highly Uniform ◽  
Thermo Physical Properties

AbstractA novel polymer dielectric derived from tris-perfluorocyclobutene(PFCB) monomer has been investigated as a thin film dielectric. The dielectric constant of this material has been measured at 2.35. PFCB is applied from a hydrocarbon solvated solution using conventional spin coating equipment onto the substrate and produces highly uniform films after curing at 300 °C.This paper describes the processing and properties of films derived from PFCB, and examines the interactions between the polymer and metals at the interfaces. In particular, the interfaces formed by the deposition of Cr or Co onto PFCB are unchanged after 30 minutes at 390 °C. The interface formed by the application of the polymer onto Ta is similarly unaffected by high temperatures. The interfaces formed by the deposition of Ta or Ti onto the polymer surface did not remain intact, with substantial quantities of the metals permeating the polymer after high temperature exposures. This behavior is discussed relative to the thermo-physical properties of the metal fluorides.

Quantitative scanning near-field microwave microscopy for thin film dielectric constant measurement

2008 ◽  
Vol 79 (9) ◽  
pp. 094706 ◽  
Author(s):  
A. Karbassi ◽  
D. Ruf ◽  
A. D. Bettermann ◽  
C. A. Paulson ◽  
Daniel W. van der Weide ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Near Field ◽  
Microwave Microscopy ◽  
Constant Measurement ◽  
Dielectric Constant Measurement ◽  
Film Dielectric

scholarly journals Strain-Induced Increase of Dielectric Constant in EuO Thin Film

2019 ◽  
Vol 6 (10) ◽  
pp. 106321 ◽  
Author(s):  
Alireza Kashir ◽  
Hyeon-Woo Jeong ◽  
Woochan Jung ◽  
Yoon Hee Jeong ◽  
Gil-Ho Lee
Keyword(s):  
Thin Film ◽  
Dielectric Constant

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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