scholarly journals Evolution of Surface Roughness During CVD Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
E. Chason ◽  
T.M. Mayer ◽  
D.P. Adams ◽  
H. Huang ◽  
T. Diaz De La Rubia ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Simulations ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Molecular Precursors ◽  
Cvd Growth ◽  
Physical And Chemical ◽  
Kinetics Of

AbstractMonte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined.

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 647-650
Author(s):  
J. MIMILA-ARROYO ◽  
J. DIAZ REYES
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Theoretical Models ◽  
Experimental Results ◽  
Reversible Chemical Reaction ◽  
Cvd Growth ◽  
Growing Conditions ◽  
Kinetics Of

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretical models are sophisticated and not accurate enough to correctly explain the experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction between the transporting gas and the III element at the source and the same reaction, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surfaces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.

The edge termination controlled kinetics in graphene chemical vapor deposition growth

2014 ◽  
Vol 5 (12) ◽  
pp. 4639-4645 ◽  
Author(s):  
Haibo Shu ◽  
Xiaoshuang Chen ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Edge Termination ◽  
Cvd Growth ◽  
Kinetics Of

The kinetics of graphene CVD growth is dominated by the type of edge passivation.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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