Time dependent Monte Carlo simulations of H reactions on the diamond {001}(2×1) surface under chemical vapor deposition conditions

1995 ◽  
Vol 102 (23) ◽  
pp. 9401-9411 ◽  
Author(s):  
E. J. Dawnkaski ◽  
D. Srivastava ◽  
B. J. Garrison
Keyword(s):  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Simulations ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Time Dependent ◽  
Deposition Conditions

scholarly journals Evolution of Surface Roughness During CVD Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
E. Chason ◽  
T.M. Mayer ◽  
D.P. Adams ◽  
H. Huang ◽  
T. Diaz De La Rubia ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Simulations ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Molecular Precursors ◽  
Cvd Growth ◽  
Physical And Chemical ◽  
Kinetics Of

AbstractMonte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined.

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

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