The edge termination controlled kinetics in graphene chemical vapor deposition growth

2014 ◽  
Vol 5 (12) ◽  
pp. 4639-4645 ◽  
Author(s):  
Haibo Shu ◽  
Xiaoshuang Chen ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Edge Termination ◽  
Cvd Growth ◽  
Kinetics Of

The kinetics of graphene CVD growth is dominated by the type of edge passivation.

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

NANO ◽  
2018 ◽  
Vol 13 (08) ◽  
pp. 1850088 ◽  
Author(s):  
Yang Wang ◽  
Yu Cheng ◽  
Yunlu Wang ◽  
Shuai Zhang ◽  
Chen Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Domain Boundaries ◽  
Cvd Growth ◽  
Graphene Domain

Many aspects in the chemical vapor deposition (CVD) growth of graphene remain unclear such as its behavior near the catalyst grain boundaries. Here we investigate the CVD growth mechanism of graphene across the Cu grain boundaries using unidirectional aligned graphene domains, which simplifies the analysis of both graphene and Cu to a large extent. We found that for a graphene domain grown across the Cu grain boundary, the domain orientation is determined by the Cu grain where the domain nucleation center is located, and the Cu grain boundary will not change the growth behavior for this graphene domain. This growth mechanism is consistent with the Cu-step-attached nucleation and edge-attachment-limited growth mechanism for H-terminated graphene domains and will provide more guidance for the synthesis of high-quality graphene with less domain boundaries.

The transition metal surface dependent methane decomposition in graphene chemical vapor deposition growth

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11584-11589 ◽  
Author(s):  
Xinlan Wang ◽  
Qinghong Yuan ◽  
Jia Li ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Shape Evolution ◽  
Chemical Vapor Deposition Growth ◽  
Catalytic Activities ◽  
Transition Metal Surface ◽  
Cvd Growth

The catalytic activities of various catalysts are found to be responsible for the shape evolution of graphene domains during CVD growth.

scholarly journals Evolution of Surface Roughness During CVD Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
E. Chason ◽  
T.M. Mayer ◽  
D.P. Adams ◽  
H. Huang ◽  
T. Diaz De La Rubia ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Simulations ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Molecular Precursors ◽  
Cvd Growth ◽  
Physical And Chemical ◽  
Kinetics Of

AbstractMonte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined.

MODELING THE CVD GROWTH OF III-V- COMPOUNDS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 647-650
Author(s):  
J. MIMILA-ARROYO ◽  
J. DIAZ REYES
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Theoretical Models ◽  
Experimental Results ◽  
Reversible Chemical Reaction ◽  
Cvd Growth ◽  
Growing Conditions ◽  
Kinetics Of

Chemical vapor deposition is widely used for growing semiconductors. In it the best growing conditions are obtained on an empirical way. Its theoretical models are sophisticated and not accurate enough to correctly explain the experimental results. In this work, we present a general model to explain the epitaxial growth kinetics of III-V semiconductor materials by chemical vapor deposition. The model is based on a reversible chemical reaction between the transporting gas and the III element at the source and the same reaction, at the substrate surface. However, the model considers that the III element might have a different chemical activity at each one of those surfaces. The model explains experimental results reported in the literature on III-V materials, by several laboratories, over decades.

Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

ACS Nano ◽  
2012 ◽  
Vol 6 (4) ◽  
pp. 3243-3250 ◽  
Author(s):  
Haibo Shu ◽  
Xiaoshuang Chen ◽  
Xiaoming Tao ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Stability ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Kinetics Of

The transition metal surface passivated edges of hexagonal boron nitride (h-BN) and the mechanism of h-BN's chemical vapor deposition (CVD) growth

2015 ◽  
Vol 17 (43) ◽  
pp. 29327-29334 ◽  
Author(s):  
Ruiqi Zhao ◽  
Feifei Li ◽  
Zhirong Liu ◽  
Zhongfan Liu ◽  
Feng Ding
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Surface ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Chemical Vapor Deposition Growth ◽  
Transition Metal Surface ◽  
Cvd Growth

The kinetics of chemical vapor deposition growth of h-BN on a transition metal catalyst surface is dominated by the metal surface passivated edge structures.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3
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