Biaxially Textured Buffer Layers on Large-Area Polycrystalline Substrates

1999 ◽  
Vol 585 ◽  
Author(s):  
J. Dzick ◽  
S. Sievers ◽  
J. Hoffmann ◽  
K. Thiele ◽  
F. Garcia-Moreno ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Thermal Contact ◽  
Deposition Process ◽  
Ion Sources ◽  
Buffer Layers ◽  
Large Area ◽  
Ybco Films ◽  
Ion Beam Assisted Deposition ◽  
Temperature Deposition

AbstractBiaxially textured yttria stabilized zirconia (YSZ) buffer layers were deposited on long polycrystalline metallic tapes by an ion-beam-assisted deposition process (IBAD) to serve as templates for high-current carrying Y1Ba2Cu3O7-x (YBCO) films. YSZ was deposited by a dualionbeam equipment with two 11 cm Kaufman ion sources. The coating of large-area technical substrates, large in comparison with the ion sources, requires substrate movements to render YSZ films of homogeneous texture quality. These movements can hinder cooling of the metallic tapes in the absence of a thermal contact. Therefore, the temperature of those small-heat-capacity substrates could rise to above 100 °C within minutes, causing a decrease of the in-plane alignment of YSZ. The investigation of the temperature dependence of the IBAD process reveals that the best results of the in-plane alignment could be obtained by room temperature deposition. Applying high tape velocities hinder a rise of the deposition temperature to above 90 °C. Therefore, it is possible to deposit YSZ films on metal tapes (up to 60 mm × 1000 mm) with in-plane textures down to 15° full width at half maximum (FWHM), which allow their coating with highcurrent-carrying YBCO films.

Biaxial alignment control of YBa2Cu3O7−x films on random Ni-based alloy with textured yttrium stabilized-zirconia films formed by ion-beam-assisted deposition

1997 ◽  
Vol 12 (11) ◽  
pp. 2913-2923 ◽  
Author(s):  
Y. Iijima ◽  
M. Hosaka ◽  
N. Tanabe ◽  
N. Sadakata ◽  
T. Saitoh ◽  
...  
Keyword(s):  
Ion Beam ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Azimuthal Distribution ◽  
Ybco Films ◽  
Strongly Coupled ◽  
Ion Beam Assisted Deposition ◽  
Biaxial Alignment ◽  
Pinning Properties ◽  
Zirconia Films

Biaxially aligned YBa2Cu3O7−x (YBCO) films were fabricated on random Ni-based alloy tapes with yttrium stabilized-zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD). Ar+ ion bombardment was found to have two significant effects on the crystalline structure of the YSZ buffer layers: to align a [100] axis with the substrate normal and a [111] axis with the bombarding beam axis. The resulting YSZ films were biaxially aligned on the random polycrystalline tapes, and the azimuthal distribution of the a- and b-axes of YBCO films on the top of the YSZ films was restricted to 10° FWHM. A critical current density (Jc) of 1.13 × 106 A/cm2 (77 K, 0 T) was obtained, and 1.1 × 105 A/cm2 was maintained at 5 T (77 K, B⊥c). The existence of both intrinsic and extrinsic pinning properties was clearly observed in the angular dependence of Jc with B⊥I. The longitudinal field effect on Jc was clearly observed, which indicated straight transport currents. This is evidence for strongly coupled current paths that demonstrate the bulk pinning properties of YBCO.

Large-area quantification of BaCeO3 formation during processing of metalorganic-deposition-derived YBCO films

2007 ◽  
Vol 22 (4) ◽  
pp. 1077-1081 ◽  
Author(s):  
D.E. Wesolowski ◽  
M.J. Cima
Keyword(s):  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Large Area ◽  
Ybco Films ◽  
X Ray ◽  
Inductively Coupled ◽  
Metalorganic Deposition ◽  
Peak Areas

A method is described for the quantification of BaCeO3 formation during the growth of YBa2Cu3O7–x (YBCO) films on CeO2 buffer layers. The method is based on the selective etching of BaCeO3 followed by inductively coupled plasma (ICP) excitation spectroscopy. A 10% HNO3 solution, at room temperature, dissolved BaCeO3 and YBCO in minutes but did not significantly etch CeO2 films. ICP excitation spectroscopy was used to quantify the extent of the reaction over macroscopic areas of film (∼1 cm2). BaCeO3 peak areas were measured by x-ray diffraction (XRD) and calibrated to the ICP excitation spectroscopy results. XRD and ICP excitation spectroscopy results indicated that BaCeO3 formation through a metalorganic deposition (MOD)-derived CeO2 layer follows the parabolic growth law. Almost the entire ceria cap layer was consumed by the growth of BaCeO3 after 2 h at 760 °C in the MOD process examined. BaCeO3 growth was substantially slower at 725 °C; only 25 ± 3% of the ceria layer reacted.

Engineered reactive cosputtered SmxZr1–xOythin films as buffer layers for YBa2Cu3O7−δcoated conductors

2007 ◽  
Vol 22 (4) ◽  
pp. 1082-1086 ◽  
Author(s):  
L. Stan ◽  
P.N. Arendt ◽  
I.O. Usov ◽  
H. Wang ◽  
S.R. Foltyn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Field Measurements ◽  
Lattice Parameter ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Manufacturing Cost ◽  
Ybco Films ◽  
Ion Beam Assisted Deposition ◽  
Wide Range ◽  
Current Densities

This study shows that biaxially textured SmxZr1−xOy(SZO) with a wide range of compositions (0.06 <x< 0.75) can be grown directly on ion-beam-assisted deposition (IBAD) MgO template using reactive cosputtering. The SZO crystal structure can be changed, and the lattice parameter can be tailored (from 5.23 to 5.49 Å) by changing the composition. We have developed a simplified high-temperature superconducting coated conductor using SZO as the buffer layer. YBa2Cu3O7−δ(YBCO) films grown by pulsed laser deposition on the SZO buffered IBAD MgO have self-field critical current densities (Jc) in the 2–4 MA/cm2range. The in-field measurements demonstrate that high-quality YBCO films can be grown on SZO buffered IBAD MgO. The present results are especially important because they were obtained on coated conductors with the simpler architecture by eliminating the additional homoepitaxial layer of MgO. This translates in faster production and lower manufacturing cost.

In-Plane Texturing of Buffer Layers by Alternating Beam Assisted Deposition: Large Area and Small Area Applications

2008 ◽  
Vol 1150 ◽  
Author(s):  
Alexander Usoskin ◽  
Lutz Kirchhoff
Keyword(s):  
Ion Beam ◽  
Thick Layer ◽  
Particle Energy ◽  
Buffer Layers ◽  
Angle Of Incidence ◽  
Large Area ◽  
Ion Etching ◽  
Ion Beam Assisted Deposition ◽  
Atomic Flow

AbstractIn standard ion beam assisted deposition (IBAD), the growing film is exposed to inclined ion etching in order to achieve a preferable in-plane orientation of the crystalline structure. Recently, we suggested exposing the film periodically to deposition pulses and to etching pulses, i.e. to assisted beam pulses. As a long sequence of alternations of these two pulses is needed, we named this method “alternating beam assisted deposition” (ABAD). In real application, the substrates exposed to the molecular/atomic flow originating from the sputter source acquire a few nanometer thick layer of yttria-stabilized zirconia (YSZ). In the next step, this layer undergoes ion etching with an Ar ion beam emitted from the source with a particle energy between 200 and 300 eV. Simultaneously with ion-beam exposition, an additional electron beam provides neutralizing of the electrical change in the substrate plane. The ion beam guided 55° at a 55° angle of incidence provides selective etching of the YSZ layer, leading finally after numerous deposition-etching cycles to a sufficiently high quality of in-plane texture in the YSZ layer with the best FWHM values of 8°-9°.

scholarly journals Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

APL Materials ◽  
2018 ◽  
Vol 6 (7) ◽  
pp. 076107 ◽  
Author(s):  
Tomas Polakovic ◽  
Sergi Lendinez ◽  
John E. Pearson ◽  
Axel Hoffmann ◽  
Volodymyr Yefremenko ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Niobium Nitride ◽  
Temperature Deposition

scholarly journals Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Room Temperature ◽  
Atomic Layer ◽  
Deposition Process ◽  
Attractive Alternative ◽  
Tin Films ◽  
Periodic Arrays ◽  
Alternative Material ◽  
Tin Thin Films ◽  
Temperature Deposition

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

Thermal Annealing Behavior of Si-DLC Ibad Coatings

1996 ◽  
Vol 438 ◽  
Author(s):  
C. G. Fountzoulas ◽  
J. D. Demaree ◽  
L. C. Sengupta ◽  
J. K. Hirvonen
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Carbon Coatings ◽  
Dlc Coatings ◽  
Annealing Behavior ◽  
Ion Beam Assisted Deposition ◽  
Disk Friction ◽  
Knoop Microhardness ◽  
Absorption Features

AbstractAmorphous, 700 nm thick, diamond-like carbon coatings containing silicon (Si-DLC), farmed by Ar+ ion beam assisted deposition (IBAD) on silicon substrates, were annealed in air at temperatures ranging from room temperature to 600°C for 30 minutes. RBS analysis showed that the composition of the films remained the same up to 200°C, but at higher temperatures the Si-DLC coatings began to oxidize at the outer surface of the coating, forming a surface layer of SiO2. After in-air annealing at 600°C the coating had been completely converted to SiO2, with no trace of carbon seen by RBS. FTIR spectra of the unannealed coatings showed a very broad mode typical of Si-DLC bonding as well as some absorption features associated with Si and SiO2. Above 200°C the transmission mode shifted to higher frequencies which may be caused by the growth of SiO2 and the decrease of the Si-DLC film thickness. The room temperature ball-on-disk friction coefficient of the coating against a 1/2′′ diameter 440 C steel ball at 1 N load ranged from 0.2 for the original coating up to 0.5 after a 100° anneal and returned to 0.2 after annealing at 200–400°C and fell to 0.12 after a 500°C exposure. The average Knoop microhardness (uncorrected for substrate effects) was 10 GPa (1,000 KHN) for coatings annealed at temperatures as high as 400°C. All coatings up to 500 °C passed the qualitative “Scotch Tape” test.

Preparation of<tex>$rm CeO_2$</tex>-Buffer Layers for Large-Area MOD-YBCO Films<tex>$(10times30 rm cm^2)$</tex>With High-<tex>$J_c$</tex>

2005 ◽  
Vol 15 (2) ◽  
pp. 2699-2702 ◽  
Author(s):  
M. Sohma ◽  
I. Yamaguchi ◽  
K. Tsukada ◽  
W. Kondo ◽  
K. Kamiya ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Large Area ◽  
Ybco Films
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