Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 438 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (PIII) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 439 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (Pill) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation

2001 ◽  
Vol 136 (1-3) ◽  
pp. 106-110 ◽  
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Plasma Source Ion Implantation ◽  
Nitrogen Ion ◽  
Ion Species

Plasma Immersion Ion Implantation Modification of Surface Properties of Polymer Material

1996 ◽  
Vol 438 ◽  
Author(s):  
Imad F. Husein ◽  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan ◽  
Jacob I. Kleiman ◽  
...  
Keyword(s):  
Contact Angle ◽  
Ion Implantation ◽  
Coefficient Of Friction ◽  
Inductively Coupled Plasma ◽  
Treatment Time ◽  
Plasma Source ◽  
High Dose ◽  
Epdm Rubber ◽  
The Coefficient Of Friction ◽  
Plasma Immersion Ion Implantation

AbstractThe use of plasma immersion ion implantation (PIII) as a novel method for the treatment of polymer surfaces is investigated. The effect of PIII treatment on the coefficient of friction, contact angle modification, and surface energy of silicone and EPDM (ethylene-propylene-diene monomer) rubber are investigated as a function of pulse voltage, treatment time, and gas species. Low energy (0 - 8 keV) and high dose (∼1017 - 1018 ions/cm2) implantation of N2, Ar, and CF4 is performed using an inductively coupled plasma source (ICP) at low pressure (0.2 mTorr). PIII treatment reduces the coefficient of friction (μ) of silicone rubber from μ = 0.464 to the range μ = 0.176 – 0.274, and μ of EPDM rubber decreases from 0.9 to the range μ = 0.27 – 0.416 depending on processing conditions. The contact angle of water and diiodomethylene decreases after implantation and increases at higher doses for both silicone and EPDM rubber.

scholarly journals Photoconduction of Polar and Nonpolar Cuts of Undoped Sr0.61Ba0.39Nb2O6 Single Crystals

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 780
Author(s):  
Elke Beyreuther ◽  
Julius Ratzenberger ◽  
Matthias Roeper ◽  
Benjamin Kirbus ◽  
Michael Rüsing ◽  
...  
Keyword(s):  
Electrical Measurement ◽  
Excitation Wavelength ◽  
Trap States ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Current Voltage ◽  
History Of ◽  
A Current ◽  
Complex Manner

In the last two decades, variably doped strontium barium niobate (SBN) has attracted a lot of scientific interest mainly due to its specific non-linear optical response. Comparably, the parental compound, i.e., undoped SBN, appears to be less studied so far. Here, two different cuts of single-crystalline nominally pure strontium barium niobate in the composition Sr0.61Ba0.39Nb2O6 (SBN61) are comprehensively studied and analyzed with regard to their photoconductive responses. We present conductance measurements under systematically varied illumination conditions along either the polar z-axis or perpendicular to it (x-cut). Apart from a pronounced photoconductance (PC) already under daylight and a large effect upon super-bandgap illumination in general, we observe (i) distinct spectral features when sweeping the excitation wavelength over the sub-bandgap region as then discussed in the context of deep and shallow trap states, (ii) extremely slow long-term relaxation for both light-on and light-off transients in the range of hours and days, (iii) a critical dependence of the photoresponse on the pre-illumination history of the sample, and (iv) a current–voltage hysteresis depending on both the illumination and the electrical-measurement conditions in a complex manner.

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