Effects of magnetic field on pulse wave forms in plasma immersion ion implantation in a radio-frequency, inductively coupled plasma

2002 ◽  
Vol 92 (5) ◽  
pp. 2284-2289 ◽  
Author(s):  
Honghui Tong ◽  
Ricky K. Y. Fu ◽  
Deli Tang ◽  
Xuchu Zeng ◽  
Paul K. Chu
Keyword(s):  
Magnetic Field ◽  
Ion Implantation ◽  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Pulse Wave ◽  
Inductively Coupled ◽  
Wave Forms ◽  
Plasma Immersion Ion Implantation

Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 438 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (PIII) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si Tfts Using an Inductively Coupled Plasma Source

1996 ◽  
Vol 439 ◽  
Author(s):  
Yuanzhong Zhou ◽  
Shu Qin ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Inductively Coupled Plasma ◽  
Stress Test ◽  
Plasma Source ◽  
Trap States ◽  
Inductively Coupled ◽  
Current Voltage ◽  
Plasma Immersion Ion Implantation ◽  
Short Time

AbstractA plasma immersion ion implantation (Pill) hydrogenation process using an inductively-coupled plasma (ICP) source is implemented for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFT's). Device parameter improvement saturates in 4 minutes, which is considerably shorter than for other reported hydrogenation methods. Stress test indicates that the devices hydrogenated by this novel technique have much better long-term reliability. The hydrogenation effects on two types of trap states are analyzed the current-voltage characteristics of the devices. The densities of deep states and tail states are significantly reduced after short time hydrogenation.

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