SrBi2Ta2O9 Capacitors for a Mega-Bit Ferroelectric Nonvolatile Memory

1996 ◽  
Vol 433 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takemitsu Kunio ◽  
Joe Cuchiaro
Keyword(s):  
Electrical Properties ◽  
Hysteresis Loop ◽  
Nonvolatile Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractSrBi2Ta2O9(SBT) capacitors were integrated to the structure for a mega-bit nonvolatile memory, and their electrical properties after metallization were investigated. Annealing above 500°C after contact-etching was necessary to obtain good electrical properties. A well saturated hysteresis loop with 2Pr of more than 15μC/cm2 was obtained for the 0.7×0.7μm capacitor. The read-out polarization was very stable in 105 sec after the write-pulse. No fatigue or imprint was observed up to 1011 cycles. These results show suitability of SBT capacitors for a mega-bit non-volatile memory.

scholarly journals Information can be stored in the human skin memristor which has non-volatile memory

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Oliver Pabst ◽  
Ørjan G. Martinsen ◽  
Leon Chua
Keyword(s):  
Electrical Properties ◽  
Human Skin ◽  
Biological Tissues ◽  
Electrical Stimulus ◽  
Information Storage ◽  
Surrounding Tissue ◽  
Electrical Measurements ◽  
Non Linear ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractMuch is already understood about the anatomical and physiological mechanisms behind the linear, electrical properties of biological tissues. Studying the non-linear electrical properties, however, opens up for the influence from other processes that are driven by the electric field or movement of charges. An electrical measurement that is affected by the applied electrical stimulus is non-linear and reveals the non-linear electrical properties of the underlying (biological) tissue; if it is done with an alternating current (AC) stimulus, the corresponding voltage current plot may exhibit a pinched hysteresis loop which is the fingerprint of a memristor. It has been shown that human skin and other biological tissues are memristors. Here we performed non-linear electrical measurements on human skin with applied direct current (DC) voltage pulses. By doing so, we found that human skin exhibits non-volatile memory and that analogue information can actually be stored inside the skin at least for three minutes. As demonstrated before, human skin actually contains two different memristor types, one that originates from the sweat ducts and one that is based on thermal changes of the surrounding tissue, the stratum corneum; and information storage is possible in both. Finally, assuming that different physiological conditions of the skin can explain the variations in current responses that we observed among the subjects, it follows that non-linear recordings with DC pulses may find use in sensor applications.

Effect of Buffer or Barrier Layer on Bistability for Nonvolatile Memory Fabricated with Al Nanocrystals Embedded in α-NPD

2006 ◽  
Vol 965 ◽  
Author(s):  
Sung-ho Seo ◽  
Woo-sik Nam ◽  
Jae-seok Kim ◽  
Chang-hyup Shin ◽  
Se-yun Lim ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Nonvolatile Memory ◽  
Device Structure ◽  
Transmission Electron ◽  
Non Volatile Memory ◽  
Memory Characteristic ◽  
Layer Behavior ◽  
Volatile Memory ◽  
20 Nm ◽  
Memory Characteristics

ABSTRACTRecently, low molecular organic non-volatile memories have been developed as a next generation of non-volatile memory because of nano-meter device-feature size and nano-second access and store-time. We developed a non-volatile memory fabricated with the device structure of Al/ α-NPD/Al nano-crystals surrounded by Al2O3/α-NPD/Al, where α-NPD is N,N'-bis(1-naphthyl)-1,1'biphenyl4-4”diamine. One layer of Al nano-crystals with ∼20 nm-width ∼20 nm length was uniform produced between α-NPD layers, confirmed by 1.2MV high voltage transmission-electron-microscope. This device showed Vth of 3.0 V, Vprogram of 4.3 V, and Verase of 6.3 V. Particularly, this device exhibited an excellent non-volatile memory behavior performing the bi-stability (Iprogrm/Ierase) of >1×102, program/erase cycles of >1×105 and multi-levels. In addition, previous reports about low molecular organic non-volatile memories have showed a bad reproducible memory characteristic. However, this issue was completely solved via isolating Al nano-crystals embedded in α-NPD by O2 plasma oxidation. The uniformity of Vth, Vp, and Ve were 9.91%, 6.94% and 7.92%, respectively. Furthermore, the effect of buffer or barrier layer on non-volatile memory characteristics was investigate to examine the control ability for Vth, Vp, and Ve. The 0.5-nm LiF showed a barrier layer behavior suppressing the bi-stability of non-volatile memory. Otherwise, 15-nm CuPc exhibited a buffer layer behavior enhancing the bi-stability of nonvolatile memory.

Keggin-type polyoxometalate cluster as an active component for redox-based nonvolatile memory

2019 ◽  
Vol 4 (3) ◽  
pp. 697-704 ◽  
Author(s):  
Xiaoli Chen ◽  
Pu Huang ◽  
Xin Zhu ◽  
Suixing Zhuang ◽  
Hengcheng Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Active Component ◽  
Reduction Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Keggin Type ◽  
Non Volatile Memory ◽  
Volatile Memory

Keggin-type polyoxometalate (POM) cluster based non-volatile memory has been investigated, and the molecular reconfiguration induced by the reduction process of POM molecules is proposed to initialize the resistive switching behavior.

Integration Aspects and Electrical Properties of SrBi2Ta2O9 for Non-Volatile Memory Applications

1996 ◽  
Vol 433 ◽  
Author(s):  
D.J. Taylor ◽  
R.E. Jones ◽  
Y.T. Lii ◽  
P. Zurcher ◽  
P.Y. Chu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Pulse Amplitude ◽  
Application Range ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Process Damage

AbstractHighlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the diffusion of Bi through the Pt bottom electrode during firing, capacitor patterning, and process damage that results from hydrogen containing atmospheres.Next, studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; fatigue resistance of 2Pr and Pnv; the retention; the small signal capacitance versus voltage behavior; and the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).

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