Integration Aspects and Electrical Properties of SrBi2Ta2O9 for Non-Volatile Memory Applications

1996 ◽  
Vol 433 ◽  
Author(s):  
D.J. Taylor ◽  
R.E. Jones ◽  
Y.T. Lii ◽  
P. Zurcher ◽  
P.Y. Chu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Pulse Amplitude ◽  
Application Range ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Process Damage

AbstractHighlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the diffusion of Bi through the Pt bottom electrode during firing, capacitor patterning, and process damage that results from hydrogen containing atmospheres.Next, studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; fatigue resistance of 2Pr and Pnv; the retention; the small signal capacitance versus voltage behavior; and the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).

Electrical Measurement of Ferroelectric Capacitors for Non-Volatile Memory Applications

1990 ◽  
Vol 200 ◽  
Author(s):  
Norman Abt
Keyword(s):  
Remanent Polarization ◽  
Cmos Technology ◽  
Electrical Measurement ◽  
Ferroelectric Capacitor ◽  
Non Volatile Memory ◽  
In Series ◽  
Volatile Memory ◽  
Memory Applications ◽  
Silicon Cmos ◽  
Ferroelectric Capacitors

ABSTRACTModified lead titanate ferroelectdc thin films are currently utilized in conjunction with silicon CMOS technology for non-volatile memory applications. The electrical measurement of ferroelectric films has been common practice for many years but the parameters necessary for optimizing their use as memory have not been routinely recorded. Remanent polarization, spontaneous polarization and their change through fatigue and ageing are still the dominant parameters but the pulsing conditions of interest are driven by the circuit requirements. The operation of a memory circuit will be discussed along with implications for testing. Memory is written by applying a pulse to the capacitor. It is read by applying a pulse and sensing whether or not the polarization switched. Read and write pulses will apply different voltages to the ferroelectric capacitor in the circuit because a sense capacitor will be in series with it during the read. A new test, pulsed hysteresis, which is based on circuit operation will be presented. Parameter space of interest will also be discussed.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors
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