Study of Thin Film Ferroelectric Superlattices

1996 ◽  
Vol 433 ◽  
Author(s):  
Y. Kim ◽  
A. Erbil ◽  
E.W. Thomas ◽  
A. Kushwaha ◽  
R. Gerhardt
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Dielectric Behavior ◽  
Prism Coupler ◽  
Compositional Modulation ◽  
Device Applications ◽  
Secondary Ion ◽  
Mocvd Technique

AbstractThe study of ferroelectric thin films has evoked special interest owing to their numerous applications. In this study, epitaxial or highly oriented PbTiO3/PLT (Lead Titanate / La modified Lead Titanate) ferroelectric superlattice thin films were grown by the metalorganic chemical vapor deposition (MOCVD) technique. Compositional modulation by Secondary Ion Mass Spectroscopy (SIMS) established the nature of these films as desirable for high quality device applications. The thickness and the refractive index of each film was determined by using a prism coupler. The dielectric behavior of these films was studied as a function of frequency.

Electrical and Microstructural Properties of Lead Titanate Thin Films Deposited by Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
M. Vellaikal ◽  
A. Kingon
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Lead Titanate ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
Fatigue Tests ◽  
Oriented Films ◽  
Metalorganic Chemical

ABSTRACTLead titanate thin films were deposited on Pt(111)/Ti/SiO2/Si(100) and RuO2/SiO2/Si(100) substrates using metalorganic chemical vapor deposition (MOCVD). Atomic force microscopy revealed that films on ruthenium oxide were rougher than films on platinum. Also the grain size of the film on ruthenium oxide was larger than that on platinum. X-ray analysis revealed that the preferred orientations for films on platinum and ruthenium oxide were different. Hysteresis and fatigue tests were performed to evaluate capacitor structures on these substrates. Films on RuO2 had lower coercive fields than films on platinum. Comparison of polycrystalline and oriented films on platinum indicated that the oriented films were easier to switch and fatigued at a slower rate than the polycrystalline films. But long term property (fatigue, imprint) testing on lead titanate resulted in resistance degradation of these contacts, unlike PZT films.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films

2000 ◽  
Vol 87 (10) ◽  
pp. 7430-7437 ◽  
Author(s):  
Y. Gao ◽  
C. L. Perkins ◽  
S. He ◽  
P. Alluri ◽  
T. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanistic Study ◽  
Metalorganic Chemical
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