Electrical and Microstructural Properties of Lead Titanate Thin Films Deposited by Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
M. Vellaikal ◽  
A. Kingon

ABSTRACTLead titanate thin films were deposited on Pt(111)/Ti/SiO2/Si(100) and RuO2/SiO2/Si(100) substrates using metalorganic chemical vapor deposition (MOCVD). Atomic force microscopy revealed that films on ruthenium oxide were rougher than films on platinum. Also the grain size of the film on ruthenium oxide was larger than that on platinum. X-ray analysis revealed that the preferred orientations for films on platinum and ruthenium oxide were different. Hysteresis and fatigue tests were performed to evaluate capacitor structures on these substrates. Films on RuO2 had lower coercive fields than films on platinum. Comparison of polycrystalline and oriented films on platinum indicated that the oriented films were easier to switch and fatigued at a slower rate than the polycrystalline films. But long term property (fatigue, imprint) testing on lead titanate resulted in resistance degradation of these contacts, unlike PZT films.

2001 ◽  
Vol 16 (1) ◽  
pp. 303-307 ◽  
Author(s):  
Takayuki Watanabe ◽  
Hiroshi Funakubo ◽  
Keisuke Saito

The orientation dependence of the ferroelectricity of epitaxially grown Bi4Ti3O12 thin films was investigated. The (001)-, (118)-, and (104)-oriented Bi4Ti3O12 films were epitaxially grown on (100)cCaRuO3//(100)SrTiO3, (110)cSrRuO3//(110)SrTiO3, and (111)cSrRuO3//(111)SrTiO3 substrates, respectively, by metalorganic chemical vapor deposition. Ferroelectric property with different magnitude was observed for (001)- and (118)-oriented films but for (104)-oriented film due to its large leakage current. The remanent polarization and the coercive field were 1.5 mC/cm2 and 15 kV/cm, 16.5 νC/cm2 and 132 kV/cm for the (001)- and (118)-oriented thin films, respectively. The spontaneous polarization (PS) was 4.0 νC/cm2 and 27.0 νC/cm2 for (001)- and (118)-oriented films, respectively. This was different from the result of SrBi2Ta2O9 in that the ferroelectricity was not observed for (001)-oriented one, and was in good agreement with the estimation from the crystal structure. The estimated PS values along the c and a axes of Bi4Ti3O12 were 4.0 and 48.4 νC/cm2, respectively, and agreed well with the reported values for the single crystal. Furthermore, both films showed good fatigue endurance after 7.8 × 1010 switching cycles measured with 500 kHz rectangular pulses.


2000 ◽  
Vol 87 (10) ◽  
pp. 7430-7437 ◽  
Author(s):  
Y. Gao ◽  
C. L. Perkins ◽  
S. He ◽  
P. Alluri ◽  
T. Tran ◽  
...  

1994 ◽  
Vol 361 ◽  
Author(s):  
D.L. Kaiser ◽  
M.D. Vaudin ◽  
L.D. Rotter ◽  
Z.L. Wang ◽  
J.P. Cline ◽  
...  

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.


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