Electrode Materials for Ferroelectric Capacitors: Properties of Reactive DC Sputtered IrO2 Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
Venkatasubramani Balu ◽  
Tung-Sheng Chen ◽  
Bo Jiang ◽  
Shao-Hong Kuah ◽  
Jack C. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Electrode Materials ◽  
Optimum Process ◽  
Deposition Condition ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
High Quality ◽  
Excellent Thermal Stability ◽  
Ferroelectric Capacitors

AbstractDue to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. In this work, IrO2 films deposited using reactive DC magnetron sputtering were studied. Film properties such as resistivity, crystallinity and morphology were examined as a function of deposition condition. Optimum process parameters to obtain high quality IrO2 thin films are suggested.

On‐axis dc magnetron sputtering of large area high quality YBa2Cu3O7superconducting thin films

1992 ◽  
Vol 61 (3) ◽  
pp. 348-350 ◽  
Author(s):  
Y. Z. Zhang ◽  
L. Li ◽  
Y. Y. Zhao ◽  
B. R. Zhao ◽  
J. W. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
High Quality

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

CrN thin films prepared by reactive DC magnetron sputtering for symmetric supercapacitors

2017 ◽  
Vol 5 (6) ◽  
pp. 2844-2851 ◽  
Author(s):  
Binbin Wei ◽  
Hanfeng Liang ◽  
Dongfang Zhang ◽  
Zhengtao Wu ◽  
Zhengbing Qi ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Electrode Materials ◽  
Dc Magnetron Sputtering ◽  
Si Substrates

CrN thin films deposited on Si substrates show promising applications as electrode materials for high performance supercapacitors.

The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Laura Fè ◽  
B. Malič ◽  
G. Norga ◽  
M. Kosec ◽  
D. J. Wouters ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Film Properties ◽  
Acetate Lead ◽  
Rectangular Hysteresis Loop ◽  
Ferroelectric Capacitors

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

Epitaxial Growth of Pt(001) Thin Films on MgO(001) Under Oxidizing Conditions

1993 ◽  
Vol 310 ◽  
Author(s):  
G. Cui ◽  
P. C. Van Buskirk ◽  
J. Zhang ◽  
C. P. Beetz ◽  
J. Steinbeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Cross Section ◽  
Film Surface ◽  
Epitaxial Films ◽  
Grain Structure ◽  
Dc Magnetron Sputtering ◽  
Oriented Growth ◽  
Rocking Curve ◽  
Ferroelectric Capacitors

AbstractEpitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/O2 mixture at 700°C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.16° and 0.20°, which is only 0.05° wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure could be observed using SEM. In contrast, the films deposited at 700 °C with pure Ar, have both Pt(111) and Pt(001) oriented growth, as shown by XRD Θ - 2 Θ scans, with the Pt(111) peak having the largest intensity. BaTiO3 epitaxial films have also been deposited on Pt(001)/MgO(001). The width (FWHM) of the rocking curve of the BaTiO3(200) peak is 0.4°. The surface morphology of the epitaxial BaTiO3(100) thin films on Pt(001)/MgO(001) is featureless. XRD pole figure measurements on Pt/BaTiO3/Pt trilayer shown a very good in-plane alignment of all layers. The epitaxial growth relationship was also confirmed by TEM electron diffraction and cross-section imaging. The Pt/BaTiO3/Pt epitaxial trilayer could serve as a prototype for ferroelectric capacitors and may be able to improve the electrical properties of the capacitors.

CHARACTERISTICS OF Y1-xCaxBa2Cu3O7-δ THIN FILMS GROWN BY DC MAGNETRON SPUTTERING

2005 ◽  
Vol 19 (12) ◽  
pp. 581-584
Author(s):  
Z. WANG ◽  
Y. Z. ZHANG ◽  
X. F. LU ◽  
H. GAO ◽  
S. L. JIA ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Superconducting Transition Temperature ◽  
Oxygen Atmosphere ◽  
Deposition Condition ◽  
Superconducting Transition ◽  
Dc Magnetron Sputtering ◽  
Annealing Pressure

Epitaxial Y 1-x Ca x Ba 2 Cu 3 O 7-δ thin films were successfully prepared by dc magnetron sputtering. The optimal deposition condition was determined. We find that the superconducting transition temperature Tc of thin films can be easily adjusted by annealing them in oxygen atmosphere with different pressures. Parabola curves are found for both Tc versus carrier concentration and Tc versus annealing pressure relations.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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