Epitaxial Growth of Pt(001) Thin Films on MgO(001) Under Oxidizing Conditions

1993 ◽  
Vol 310 ◽  
Author(s):  
G. Cui ◽  
P. C. Van Buskirk ◽  
J. Zhang ◽  
C. P. Beetz ◽  
J. Steinbeck ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Cross Section ◽  
Film Surface ◽  
Epitaxial Films ◽  
Grain Structure ◽  
Dc Magnetron Sputtering ◽  
Oriented Growth ◽  
Rocking Curve ◽  
Ferroelectric Capacitors

AbstractEpitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/O2 mixture at 700°C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.16° and 0.20°, which is only 0.05° wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure could be observed using SEM. In contrast, the films deposited at 700 °C with pure Ar, have both Pt(111) and Pt(001) oriented growth, as shown by XRD Θ - 2 Θ scans, with the Pt(111) peak having the largest intensity. BaTiO3 epitaxial films have also been deposited on Pt(001)/MgO(001). The width (FWHM) of the rocking curve of the BaTiO3(200) peak is 0.4°. The surface morphology of the epitaxial BaTiO3(100) thin films on Pt(001)/MgO(001) is featureless. XRD pole figure measurements on Pt/BaTiO3/Pt trilayer shown a very good in-plane alignment of all layers. The epitaxial growth relationship was also confirmed by TEM electron diffraction and cross-section imaging. The Pt/BaTiO3/Pt epitaxial trilayer could serve as a prototype for ferroelectric capacitors and may be able to improve the electrical properties of the capacitors.

Epitaxial Growth of Bi 2 Sr 2-x La x Cu 1 O 6+δ Thin Films by In-Situ dc Magnetron Sputtering

1998 ◽  
Vol 15 (5) ◽  
pp. 373-375 ◽  
Author(s):  
Ying-zi Zhang ◽  
Duo-gui Yang ◽  
Lin Li ◽  
Bai-ru Zhao ◽  
Shun-lian Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Dc Magnetron Sputtering

Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

CrystEngComm ◽  
2019 ◽  
Vol 21 (23) ◽  
pp. 3552-3556 ◽  
Author(s):  
Ryosuke Kikuchi ◽  
Toru Nakamura ◽  
Yasushi Kaneko ◽  
Kazuhito Hato
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Reactive Sputtering ◽  
Epitaxial Films ◽  
Step Growth

Two-step growth makes it possible to grow NbON epitaxial films and minimize anion-related defects in the NbON films.

Electrode Materials for Ferroelectric Capacitors: Properties of Reactive DC Sputtered IrO2 Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
Venkatasubramani Balu ◽  
Tung-Sheng Chen ◽  
Bo Jiang ◽  
Shao-Hong Kuah ◽  
Jack C. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Electrode Materials ◽  
Optimum Process ◽  
Deposition Condition ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
High Quality ◽  
Excellent Thermal Stability ◽  
Ferroelectric Capacitors

AbstractDue to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. In this work, IrO2 films deposited using reactive DC magnetron sputtering were studied. Film properties such as resistivity, crystallinity and morphology were examined as a function of deposition condition. Optimum process parameters to obtain high quality IrO2 thin films are suggested.

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3

1998 ◽  
Vol 4 (S2) ◽  
pp. 578-579
Author(s):  
J. C. Jiang ◽  
X.Q. Pan ◽  
Q. Gan ◽  
C. B. Eom
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Cross Section ◽  
Ion Milling ◽  
Plan View ◽  
Face To Face ◽  
Electrical And Magnetic Properties ◽  
Device Applications ◽  
Ferroelectric Capacitors

Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

Growth and Structure of in-plane Textured MgO Thin Films Deposited on Amorphous Substrates using ion-beam-assisted E-Beam Evaporation

1997 ◽  
Vol 504 ◽  
Author(s):  
Connie P. Wang ◽  
Khiem B. Do ◽  
Ann F. Marshall ◽  
Theodore H. Geballe ◽  
Malcolm R. Beasley ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Film Growth ◽  
Early Stage ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Grain Structure ◽  
Structure Evolution ◽  
Stages Of Growth ◽  
Amorphous Substrates

ABSTRACTIn-plane aligned MgO thin films (∼100Å) have been obtained on various amorphous substrates by Ar+ ion-assisted electron-beam evaporation. Based on RHEED and cross-section TEM, we have shown that the MgO texture appears at a very early stage of film growth and is optimized at a thickness of around 100Å. Optimal thickness is the stage at which the surface is fully covered by MgO crystallites. The planar-view TEM of grain structure evolution in samples at different stages of growth reveals the dynamics of the texture developing process. Small, (100)-faceted MgO grains were observed both in planar-view and cross-section TEM images.

Growth of CeO2 thin films deposited on biaxially textured nickel substrates

2003 ◽  
Vol 18 (1) ◽  
pp. 14-26 ◽  
Author(s):  
D. Eyidi ◽  
M. D. Croitoru ◽  
O. Eibl ◽  
R. Nemetschek ◽  
W. Prusseit
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Buffer Layers ◽  
Plan View ◽  
Ni Substrate ◽  
Transmission Electron ◽  
Nickel Substrates

CeO2 films are technologically important as buffer layers for the integration of superconducting YBa2Cu3O7−δ films on {100}-biaxially textured Ni substrates, yielding a Ni–CeO2–YBa2Cu3O7−δ layer sequence. The Ni–CeO2 interface is a metal–oxide interface, and the misfit between substrate and film is about 9%. An epitaxial growth model was suggested for this system in the literature. The investigated films were deposited by a reactive thermal evaporation process at substrate temperatures of 650–670 °C with a thickness of 100 nm after deposition. The CeO2 films were characterized by plan-view and cross-section transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. The CeO2 films had a strong {100} biaxial texture with a roughness of approximately 90 nm. No intermediate layer could be found by cross-section transmission electron microscopy at the Ni–CeO2 interface. The films had columnar grains with diameters of 20–50 nm, much smaller than the grain size of the Ni substrate, which was larger than 1 μm. Small-angle grain boundaries and small amounts of 〈111〉-oriented grains were evidenced in plan-view samples by diffraction patterns. The Moiré fringes technique was applied and was ideally suited to image the small rotations (≤3°) of the small CeO2 grains with respect to the Ni substrate. These small rotations of small grains showed that the growth was nonepitaxial, however, biaxially textured. In the CeO2 film samples, nanovoids 5–10 nm in size were observed and were mostly located close to the film surface. A model for the growth of CeO2 thin films on nickel substrates can be proposed on the basis of our results.

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