The Role of Precursor Chemistry in the Ferroelectric Properties of Donor Doped Pb(Zr,Ti)O3 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Laura Fè ◽  
B. Malič ◽  
G. Norga ◽  
M. Kosec ◽  
D. J. Wouters ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Acetate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Chemistry ◽  
Film Properties ◽  
Acetate Lead ◽  
Rectangular Hysteresis Loop ◽  
Ferroelectric Capacitors

AbstractModified sol-gel processes have been developed for the preparation of precursor solutions of undoped, La and Ta doped PZT (25/75). These processes use different solvents (methoxyethanol, butoxyethanol) and different lead sources (lead acetate, lead oxide). Due to variations in the structure and in the composition of the solutions, significantly different thermal decomposition behaviors were found. These inevitably affected texture and microstructure of the sol-gel derived thin films, demonstrating the important role of precursor chemistry in the improvement of film properties. In the case of tantalum doped Pt/PZT/Pt ferroelectric capacitors a rectangular hysteresis loop, featuring high Pr, was obtained for one specific precursor chemistry.

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

The role of excess Pb and PbO overpressure on the microstructural development in polycrystalline PZT thin films

1994 ◽  
Vol 52 ◽  
pp. 582-583
Author(s):  
M. J. Lefevre ◽  
D. B. Dimos ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Optical Data Storage ◽  
Optical Data ◽  
Microstructural Development

Ferroelectric thin films have recently received considerable attention because of their potential in a range of device applications including both volatile and non-volatile memories, optical data storage, and other electrooptic applications (e.g. waveguides, switches, and modulators). The Pb-based perovskites, such as Pb(Zr,Ti)O3, have many properties that make them attractive for such applications because of their high switchable remanant polarization. In addition, many applications require integration of the ferroelectric with semiconductors. In our work we are studying the crystallization sequence of PZT 40/60 (PbZr0.40Ti0.60O3) grown on platinized silicon substrates, with an overall structure given as PZT/Pt/Ti/SiO2Si. The Ti and Pt are sequentially evaporated onto the oxidized Si substrate. Alkoxide-derived films are spun onto these substrates to form a dry amorphous gel2. The crystallization of the sol-gel film proceeds upon heating to temperatures in the range of 400-700°C. Lead volatility is one of the critical issues in the crystallization of Pb-based perovskite thin films. We have carried out a systematic study on the role of a lead atmosphere in crystallization for PZT (40/60). When heat treated the film forms a transitory pyrochlore phase at intermediate temperatures before transforming to the perovskite phase. This non-ferroelectric pyrochlore phase may stabilize if lead stoichiometry is not maintained, leading to poor optical and ferroelectric properties in the thin films.

scholarly journals Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

2015 ◽  
Vol 51 (6) ◽  
pp. 1143-1146 ◽  
Author(s):  
Monika Warzecha ◽  
Jesus Calvo-Castro ◽  
Alan R. Kennedy ◽  
Alisdair N. Macpherson ◽  
Kenneth Shankland ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fluorescence Quenching ◽  
Optical Detection ◽  
Film Properties ◽  
Structural Order ◽  
Quenching Efficiency ◽  
First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

2012 ◽  
Vol 23 (9) ◽  
pp. 1711-1714 ◽  
Author(s):  
Changyong Liu ◽  
Yiping Gong ◽  
Dongyun Guo ◽  
Chuanbin Wang ◽  
Qiang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

2012 ◽  
Vol 64 (3) ◽  
pp. 711-717 ◽  
Author(s):  
Ling Pei ◽  
Ni Hu ◽  
Gang Deng ◽  
Yiwan Chen ◽  
Yeguang Bie ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Preparation and ferroelectric properties of Bi3.4Ce0.6Ti3O12 thin films grown by sol-gel method

2008 ◽  
Vol 51 (1) ◽  
pp. 10-15 ◽  
Author(s):  
DongYun Guo ◽  
MeiYa Li ◽  
Jun Liu ◽  
BenFang Yu ◽  
Ling Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

scholarly journals Enhancement the Sensitivity of waveguide Coated ZnO thin films: Role of Plasma Irradiation

2020 ◽  
Vol sceeer (3d) ◽  
pp. 93-98
Author(s):  
Marwan Younus ◽  
Muayad Ahmed ◽  
Ghazwan Ali
Keyword(s):  
Thin Films ◽  
Glucose Solution ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Dielectric Barrier Discharge Plasma ◽  
Dbd Plasma ◽  
Plasma Irradiation ◽  
Before And After ◽  
Barrier Discharge Plasma

In this study, Dielectric Barrier Discharge plasma irradiation (DBD) is applied to treatment and improve the properties of the ZnO thin film deposited on the glass substrate as a sensor for glucose detection. The ZnO is prepared via a sol-gel method in this work. ZnO is irradiated by the DBD high voltage plasma to improve of its sensitivity. The optical properties, roughness and surface morphology of the waveguide coated ZnO thin films before and after DBD plasma irradiation are studied in this work. The results showed a significant improvement in the performance of the sensor in the detection of concentrations of glucose solution after plasma irradiation. Where the largest value in sensitivity was equal to 62.7 when the distance between electrodes was 5 cm compared to the sensitivity before irradiation, which was equal to 92. The high response showed in results demonstrating that the fabricated waveguide coated ZnO after plasma irradiation has the excellent potential application as a sensor to detect small concentration of glucose solution.

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