On‐axis dc magnetron sputtering of large area high quality YBa2Cu3O7superconducting thin films

1992 ◽  
Vol 61 (3) ◽  
pp. 348-350 ◽  
Author(s):  
Y. Z. Zhang ◽  
L. Li ◽  
Y. Y. Zhao ◽  
B. R. Zhao ◽  
J. W. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
High Quality

High Performance Thin Film Transistor with ZnO Channel Layer Deposited by DC Magnetron Sputtering

2008 ◽  
Vol 8 (9) ◽  
pp. 4557-4560 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Dae-Yong Moon ◽  
Sang-Ho Lee ◽  
Chang-Oh Jeong ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Chemical Properties ◽  
High Mobility ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Large Area ◽  
Channel Layer

Research in large area electronics,1 especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs).2–5 ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (μsat) of 1.8 cm2/Vs and threshold voltage (Vth) of −0.7 V were obtained.

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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