Synthesis and Characterization of Siof Thin Films Deposited by Ecrcvd for Ulsi Multilevel Interconnections

1996 ◽  
Vol 427 ◽  
Author(s):  
Seoghyeong Lee ◽  
Jong-Wan Park
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Fluorine Content ◽  
Fluorine Concentration ◽  
Flow Ratio ◽  
Ecr Plasma ◽  
Gas Flow Ratio

AbstractLow dielectric constant fluorine doped silicon oxide films were deposited by using ECR plasma CVD with SiF4 and O2 as source gases diluted in Ar gas. Characterization of films was carried out in terms of various gas flow ratios (SiF4/O2 = 0.2 ∼ 1.6). The microwave power and substrate temperature during deposition were fixed at 700W and 300°C, respectively. The chemical bonding structure of the films was evaluated by Fourier transform infrared spectroscopy (FTIR), fluorine concentration by X-ray photoelectron spectroscopy (XPS) and refractive index by ellipsometry. Dielectric constant was determined from C-V measurements at 1MHz. FTIR spectra shows that as the fluorine concentration increases, peak intensities of Si-F bonding and shoulder peak at around 1160cm−1 of Si-O stretching mode increased. Moreover, with increasing the fluorine concentration in the SiOF film, the peak position of Si-O stretching mode shifts to the higher wavenumber side. The Si-F2 bond peak is observed to rise when the SiF4/O2 gas flow ratio is larger than 1.0. Refractive index and film density decreased with increasing the SiF4/O2 gas flow ratio. The SiOF film deposited at SiF4/O2 gas flow ratio of 1.0 exhibited fluorine content of 11.8 at.% and dielectric constant of 3.14.

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

2008 ◽  
Vol 23 (5) ◽  
pp. 1433-1442 ◽  
Author(s):  
S. Naskar ◽  
S.D. Wolter ◽  
C.A. Bower ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Rf Plasma ◽  
Flow Ratio ◽  
Plasma Chemical Vapor Deposition ◽  
Gas Flow Ratio

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

Optical Properties of Silica Films Prepared on Sapphire

2005 ◽  
Vol 475-479 ◽  
pp. 3709-3712 ◽  
Author(s):  
Li Ping Feng ◽  
Zheng Tang Liu
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Silica Films ◽  
Sio2 Films ◽  
X Ray ◽  
Gas Flow Ratio ◽  
Optical And Mechanical Properties ◽  
Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

The Effects of Deposition Parameters on the Properties of SiO2 Films Deposited by Microwave Ecr Plasmas

1993 ◽  
Vol 334 ◽  
Author(s):  
T. T. Chau ◽  
P. M. Lam ◽  
K. C. Kao
Keyword(s):  
Refractive Index ◽  
Deposition Rate ◽  
Gas Flow ◽  
High Pressures ◽  
Thermally Grown Oxide ◽  
Film Deposition ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Film Deposition Rate ◽  
Thermally Grown

AbstractElectronic and physical properties of SiO2 films deposited by microwave ECR plasmas of the mixtures of SiH4 and N2O have been measured as functions of the pressure and the gas-flow ratio of N2O to SiH4 gases in the processing chamber. Experimental results show that the film deposition rate increases with increasing SiH4 concentration, that is, with decreasing gas-flow ratio. The films deposited at N2O/SiH4 gas-flow ratios smaller than 10 tend to have a refractive index higher than the thermally grown oxide. However, for the N2O/SiH4 gas-flow ratios between 10 and 20, the films have the refractive index close to that of thermally grown oxide, which is about 1.45-1.46. The film deposition rate increases linearly with increasing pressure. In general, the films deposited at high pressures (>100 mTorr) have a higher refractive index as compared with the thermally grown oxide; also films deposited at high pressures have more electron traps. Good quality SiO2 films can be deposited at pressures with the range of 20 -50 mTorr and the N2O/SiH4 gas-flow ratio of 10.

Characterization of SiOF Thin Films Deposited by PECVD from Hexamethyldisiloxane in Mixture with Oxygen and CF4

2009 ◽  
Vol 609 ◽  
pp. 59-62 ◽  
Author(s):  
R. Chabane ◽  
Salah Sahli ◽  
A. Zenasni ◽  
Patrice Raynaud ◽  
Y. Segui
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Electron Cyclotron Resonance ◽  
Plasma Reactor ◽  
Deposition Process ◽  
Fluorine Concentration ◽  
Analysis Technique ◽  
Gas Flow Ratio ◽  
Stretching Vibration

Thin SiOF films were elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from a mixture of hexamethyldisiloxane (HMDSO) and oxygen (O2) (in 1: 9 proportion) with the presence of various CF4 concentrations. The fluorine contents in the films composition were adjusted by the CF4 gas flow ratio (in the range of 10 - 70%). The refractive index and the deposition rate were estimated from ellipsometric data and the film chemical structure was studied by FTIR analysis technique. The deposition rate increases with increasing CF4 flow and then decreases after reaching a maximum value for 20% of CF4. The decrease in the deposition rate may be attributed to the etching effect by CF4 plasma during the deposition process. As the additive fluorine concentration increases, the intensity of Si–F peak stretching vibrations located at 930 cm-1 increases and the frequency of the Si–O stretching vibration mode centered at 1060 cm-1 shifts towards higher wavenumber.

Fabrication of planar SiON optical waveguide and its characterization

2005 ◽  
Vol 891 ◽  
Author(s):  
Yu-Jeong Cho ◽  
Yeong-Cheol Kim
Keyword(s):  
Refractive Index ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Core Layer ◽  
Silicon Oxynitride ◽  
Flow Ratio ◽  
Cladding Layer ◽  
Gas Flow Ratio ◽  
Index Contrast ◽  
Optical Planar Waveguide

ABSTRACTSilicon oxynitride (SiON) was deposited as a core layer on a silica (SiO2) under-cladding layer by using plasma enhanced chemical vapor deposition (PECVD). The refractive index of the SiON core layer was varied between 1.45 and 1.78 by changing the gas flow ratio of SiH4, N2O and NH3. Etching experiments were performed using a dry etching equipment to fabricate the SiON core. An optical planar waveguide with a core and under-cladding thicknesses of 6 μm and 8 μm, respectively, and a refractive index contrast (Δn) of 7 % has been fabricated.

Effect of Nitrogen-to-Total Gas Flow Ratio on the Nanocomposite TiAlBN Coating

2015 ◽  
Vol 761 ◽  
pp. 431-435
Author(s):  
Zulkifli Rosli ◽  
Wai Loon Kwan ◽  
Mohd Warikh Ab Rashid ◽  
Jariah Mohd Juoi ◽  
Nayan Nafarizal
Keyword(s):  
Grain Size ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Boron Concentration ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Chemical Compositions ◽  
Flow Ratio ◽  
X Ray ◽  
Gas Flow Ratio

A nanocomposite TiAlBN (n-TiAlBN) coating has been successfully deposited via RF magnetron sputtering by varying the nitrogen-to-total gas flow ratio (RN) at a substrate temperature of 300 °C. The coating was deposited on AISI 316 substrates using a single Ti-Al-BN hot-pressed target. The crystal phases, grain size and chemical composition of the coatings were measured using the glancing angle X-ray diffraction analysis (GAXRD) and X-ray photoelectron spectroscopy (XPS). The grains size of the n-TiAlBN coating was found to be within the range of 3.5 to 5.7 nm calculated using Scherrer’s formula. The n-TiAlBN coating reached a nitride saturated state at a higher RN (e.g >15%) with the amount of boron concentration to be around 9 at. %. Further, reducing the RN (e.g. 5%) has increased the boron concentration to 16.17 at. %. This paper shows that by carefully control the nitrogen-to-total gas flow ratio (RN) in the n-TiAlBN coating, it indeed gives a significant effect on its crystallographic structure, grain size, and chemical compositions.

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