Effects of O[sub 2] gas flow ratio and flow rate on the formation of RuO[sub 2] thin films by reactive sputtering

2000 ◽  
Vol 18 (3) ◽  
pp. 1348 ◽  
Author(s):  
Y. Abe ◽  
Y. Kaga ◽  
M. Kawamura ◽  
K. Sasaki
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Gas Flow ◽  
Reactive Sputtering ◽  
Flow Ratio ◽  
Gas Flow Ratio

scholarly journals Effect of Differentiated Injection Ratio, Gas Flow Rate, and Slag Thickness on Mixing Time and Open Eye Area in Gas-Stirred Ladle Assisted by Physical Modeling

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 555 ◽  
Author(s):  
Luis E. Jardón-Pérez ◽  
Daniel R. González-Morales ◽  
Gerardo Trápaga ◽  
Carlos González-Rivera ◽  
Marco A. Ramírez-Argáez
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Mixing Time ◽  
Flow Ratio ◽  
Gas Flow Rate ◽  
Nsga Ii ◽  
Image Velocimetry ◽  
Gas Flow Ratio ◽  
Slag Thickness ◽  
Injection Ratio

In this work, the effects of equal (50%/50%) or differentiated (75%/25%) gas flow ratio, gas flow rate, and slag thickness on mixing time and open eye area were studied in a physical model of a gas stirred ladle with dual plugs separated by an angle of 180°. The effect of the variables under study was determined using a two-level factorial design. Particle image velocimetry (PIV) was used to establish, through the analysis of the flow patterns and turbulence kinetic energy contours, the effect of the studied variables on the hydrodynamics of the system. Results revealed that differentiated injection ratio significantly changes the flow structure and greatly influences the behavior of the system regarding mixing time and open eye area. The Pareto front of the optimized results on both mixing time and open eye area was obtained through a multi-objective optimization using a genetic algorithm (NSGA-II). The results are conclusive in that the ladle must be operated using differentiated flow ratio for optimal performance.

Influence of sputter power and N2 gas flow ratio on crystalline quality of AlN layers deposited at 823 K by RF reactive sputtering

2011 ◽  
Vol 9 (3-4) ◽  
pp. 515-518 ◽  
Author(s):  
Tomoyuki Kumada ◽  
Makoto Ohtsuka ◽  
Kazuya Takada ◽  
Hiroyuki Fukuyama
Keyword(s):  
Gas Flow ◽  
Reactive Sputtering ◽  
Crystalline Quality ◽  
Flow Ratio ◽  
Gas Flow Ratio

scholarly journals Effect of Reactive Gas Flow Ratio on IC-PECVD Deposited a-SiC:H Thin Films

2014 ◽  
Vol 87 ◽  
pp. 128-131 ◽  
Author(s):  
Tobias Frischmuth ◽  
Michael Schneider ◽  
Thomas Grille ◽  
Ulrich Schmid
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Reactive Gas

Blue shift in the optical bandgap of tin oxide thin films by controlling oxygen-to-argon gas flow ratio

2015 ◽  
Vol 08 (01) ◽  
pp. 1550014 ◽  
Author(s):  
Meenakshi ◽  
Sanjeev Gautam ◽  
Keun Hwa Chae ◽  
Ik-Jae Lee ◽  
Hyun-Joon Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Gas Flow ◽  
Blue Shift ◽  
Optical Bandgap ◽  
Visible Range ◽  
Flow Ratio ◽  
Argon Gas ◽  
Tauc Plot ◽  
Gas Flow Ratio

Tin oxide ( SnO 2) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates at different oxygen-to-argon gas-flow ratio ( O 2-to- Ar = 0%, 10%, 20%, 30% and 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited only in argon environment. The transparency of all of the films was more than 85% in the visible range except the film deposited only in the argon environment. Atomic force microscopy results showed that the surface of all the films were highly flat and smooth. The optical bandgap, estimated by Tauc plot was increased with oxygen environment. Blue shift was observed in the absorption edge and was accounted to decrease in the oxygen vacancies and dangling bonds.

Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

2015 ◽  
Vol 26 (8) ◽  
pp. 6025-6031 ◽  
Author(s):  
K. C. Das ◽  
S. P. Ghosh ◽  
N. Tripathy ◽  
G. Bose ◽  
A. Ashok ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Flow Ratio ◽  
Working Pressure ◽  
Surface And Interface ◽  
Gas Flow Ratio

Characteristics of SnO2 Thin Films Deposited by RF Magnetron Sputtering

2004 ◽  
Vol 449-452 ◽  
pp. 993-996 ◽  
Author(s):  
Hyun Wook Ryu ◽  
Yong Joo Park ◽  
Hyo Sup Noh ◽  
Jin Seong Park
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Flow Ratio ◽  
Post Annealing ◽  
Wide Range ◽  
Gas Flow Ratio ◽  
Small Grains ◽  
Film Characteristics

SnO2 thin films were prepared on SiO2/Si substrate by RF-Magentron Sputtering method, varying the deposition time and Ar-to-O2 flow ratio. The post-annealing was conducted at 500 oC and 700 oC in Ar and O2 atmosphere, respectively. Film characteristics were very sensitive to the gas flow ratio during the deposition and the conditions of post-annealing. The Film thickness decreased with decreasing of Ar flow ratio at a constant amount (50 sccm) of total gas flow. Especially, the film deposited under Ar-O2 mixture gas (Ar-to-O2 ratio of 50%) showed clearly aggregated morphology of small particles (cauliflower) in a wide range of area. In the annealed films, these cauliflowers separated some small grains, decreasing the film thickness.

Fabrication of Tungsten-Tellurite Glass Thin Films using Radio Frequency Magnetron Sputtering Method and Optical Property Characterization

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Young Yoo ◽  
Sanghoon Shin ◽  
Youngman Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Gas Flow ◽  
Room Temperature ◽  
Tellurite Glass ◽  
Processing Parameters ◽  
Flow Ratio ◽  
Rf Power ◽  
Gas Flow Ratio

AbstractTungsten-tellurite glass thin films were fabricated by radio-frequency (rf) magnetron sputtering method at various processing parameters such as substrate temperatures, Ar/O2 processing gas flow ratio, processing pressure, and rf power from a 70TeO2-30WO3 target fabricated by solid–state sintering method. The effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films were investigated using atomic force microscopy, X-ray diffractometer, scanning electron microscopy, and UV spectrometer. Amorphous glass thin films with a surface roughness of 4∼6 nm were obtained only at room temperature and crystalline phase were observed in all as-deposited thin films prepared at above the room temperature. The deposition rate strongly depends on the processing parameters. It increases as the rf power increases and the processing pressure decreases. Especially, it changes remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ∼0.2 μm /h, whereas ∼1.5 μm/h when the films was formed in pure O2 atmosphere.

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