Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
J. G. Fleming ◽  
E. Roherty-Osmun ◽  
J. S. Custer
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Deposition Rates ◽  
Step Coverage ◽  
Sputter Deposited

AbstractWe have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 μΩ-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.

Preparation of iridium metal films by spray chemical vapor deposition

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1681-1685
Author(s):  
Yoshiyuki Seki ◽  
Yutaka Sawada ◽  
Hiroshi Funakubo ◽  
Kazuhisa Kawano ◽  
Noriaki Oshima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Metal Films ◽  
Film Deposition ◽  
Si Substrate ◽  
Step Coverage ◽  
Oxide Impurity ◽  
Temperature Resistivity

AbstractMetal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330°C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Ir films decreased with increasing film thickness and reached to values on the order of 10-6 Ω・cm, which was the same order of the values for bulk Ir metal. Good step coverage was observed for the Ir metal films deposited at 270°C and 330°C. This shows that the simple spray CVD process in air is a good candidate for depositing Ir metal films with good conductivity and step coverage.

Highly Conformal Diffusion Barriers of Amorphous Niobium Nitride

1999 ◽  
Vol 564 ◽  
Author(s):  
R. G. Gordon ◽  
X. Liu ◽  
R. N. R. Broomhall-Dillard ◽  
Y. Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Niobium Nitride ◽  
Diffusion Barriers ◽  
X Rays ◽  
Electrically Conductive ◽  
Conductive Films ◽  
Step Coverage ◽  
Substrate Temperatures

AbstractElectrically conductive films of niobium nitride were formed by chemical vapor deposition from tetrakis(diethylamido)niobium and ammonia. The films were found to be highly conformal, with step coverage nearly 100% for substrate temperatures near 350°C. The structure of the films was amorphous by diffraction of X-rays and electrons. The reliability of the films as barriers to diffusion of copper was also tested.

Advanced CVD Barrier Technology for Copper Interconnect

1999 ◽  
Vol 564 ◽  
Author(s):  
A. Jain ◽  
O. Adetutu ◽  
B. Ekstrom ◽  
G. Hamilton ◽  
M. Herrick ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Process Development ◽  
Process Integration ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Integration Schemes ◽  
Deposition Processes

AbstractThe adoption of copper (Cu) interconnects has imposed the challenge of developing a chemical vapor deposition (CVD) diffusion barrier technology that can be implemented for subhalf micron back-end design rules. Chemical vapor deposition (CVD) offers significantly higher film step coverage compared with sputter deposition processes. A number of materials have been proposed in literature for diffusion barriers of copper. However, the ability to suppress diffusion of Cu is only one of the barrier requirements out of a long list necessary for process integration. A number of other factors depend on the interaction of the barrier with Cu and with the underlying dielectric. We will begin with a review of some of the CVD candidate materials followed by a discussion on various interactions between barrier/Cu and barrier/dielectric that impact process reliability.In addition there are manufacturing considerations ranging from availability of high purity precursor to complex issues of process compatibility, lowering defectivity, and reducing cost-ofownership (CoO). Ultimately, the choice may not necessarily be the most robust diffusion barrier but a process which provides adequate barrier properties and can be integrated easily and cost effectively to build Cu interconnect structures. Therefore, both materials and manufacturing requirements must be considered for selecting a barrier system.A literature review is presented on some of the integration schemes and limitations they place on a barrier system. We will also share work done at Motorola on materials characterization and process development towards integration on some of the barrier processes. Finally, future trends in process development of diffusion barriers is presented.

Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures

2009 ◽  
Vol 2 ◽  
pp. 036503 ◽  
Author(s):  
Kenji Matsumoto ◽  
Koji Neishi ◽  
Hitoshi Itoh ◽  
Hiroshi Sato ◽  
Shigetoshi Hosaka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Mn Oxide ◽  
Step Coverage ◽  
And Diffusion

Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)2, Sr(methd)2, and Ti(MPD)(tmhd)2

1999 ◽  
Vol 14 (10) ◽  
pp. 3988-3994 ◽  
Author(s):  
Jung-Hyun Lee ◽  
Shi-Woo Rhee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Tetraethylene Glycol ◽  
Step Coverage ◽  
Liquid Injection ◽  
Direct Liquid Injection

Deposition characteristics of (Ba,Sr)TiO3 (BST) thin films by metalorganic chemical vapor deposition with a mixture solution were investigated. Ba(methd)2 (methd = methoxyethoxytetramethylheptanedionate), Sr(methd)2, and Ti(MPD)2(tmhd)2 (MPD = methylpentanedioxy, tmhd = tetramethylheptanedionate) were dissolved together in methanol solvent. Mass spectrometry showed that Ba(methd)2 was less aggregated than Ba(tmhd)2-tetraglyme adduct (tetraglyme = tetraethylene glycol dimethyl ether) in the gas phase. Similar results were obtained from Sr precursors. Step coverage and electrical properties of the BST films were investigated as a function of deposition temperature from 350 to 600 °C. With the increase of the deposition temperature up to 500 °C, Ti composition in the films was increased, but Ba and Sr remained almost constant, and the step coverage became poor. Also, leakage current density and SiO2 equivalent oxide thickness was reduced as the deposition temperature increased. Poor incorporation of Ti below the deposition temperature of 500 °C was observed.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

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