Preparation of iridium metal films by spray chemical vapor deposition

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1681-1685
Author(s):  
Yoshiyuki Seki ◽  
Yutaka Sawada ◽  
Hiroshi Funakubo ◽  
Kazuhisa Kawano ◽  
Noriaki Oshima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Metal Films ◽  
Film Deposition ◽  
Si Substrate ◽  
Step Coverage ◽  
Oxide Impurity ◽  
Temperature Resistivity

AbstractMetal Ir films were prepared by spray chemical vapor deposition (CVD) in air from an Ir precursor, (1,3-cyclohexadiene)(ethylcyclopentadienyl)iridium, Ir(EtCp)(CHD). Film deposition was ascertained at 270–430°C on a SiO2/Si substrate and the deposition rate increased with the deposition temperature but was saturated above 330°C. The obtained films consisted of Ir metal without any iridium oxide impurity irrespective of the deposition temperature. Films tended to orient to (111) with increasing deposition temperature. Resistivity of these Ir films decreased with increasing film thickness and reached to values on the order of 10-6 Ω・cm, which was the same order of the values for bulk Ir metal. Good step coverage was observed for the Ir metal films deposited at 270°C and 330°C. This shows that the simple spray CVD process in air is a good candidate for depositing Ir metal films with good conductivity and step coverage.

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
J. G. Fleming ◽  
E. Roherty-Osmun ◽  
J. S. Custer
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Deposition Rates ◽  
Step Coverage ◽  
Sputter Deposited

AbstractWe have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 μΩ-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.

Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
Byoung-Youp Kim ◽  
Seung-Hyun Lee ◽  
Sang-Gee Park ◽  
Ki-Young Oh ◽  
Juho Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Film Deposition ◽  
Process Temperature ◽  
Step Coverage ◽  
Layer Deposition ◽  
Post Deposition

ABSTRACTThis paper compared two different film deposition processes for formation of TiN barrier layers, conventional TiCl4-based chemical vapor deposition and atomic layer deposition (ALD). The 30nm thick TiN film deposited by conventional TiCl4-based CVD at the process temperature of 600°C followed by NH3 post-deposition anneal showed about 180 μΩcm of resistivity, over 95 % of step coverage for the pattern aspect ratio of 6 on 0.35 μm contact diameters, and below 2 at.% of chlorine contents in the film. Meanwhile, the films deposited by ALD at 100°C lower process temperature than CVD showed much better film properties even without post-deposition anneal. It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics. More detailed material analysis was done by AFM, SEM, and AES.

Low-Temperature Organometallic Chemical Vapor Deposition of Transition Metals

1988 ◽  
Vol 131 ◽  
Author(s):  
Herbert D. Kaesz ◽  
R. Stanley Williams ◽  
Robert F. Hicks ◽  
Yea-Jer Arthur Chen ◽  
Ziling Xue ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Metal Complexes ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Films ◽  
Film Deposition ◽  
X Ray ◽  
Substrate Temperatures ◽  
Organometallic Chemical Vapor Deposition

ABSTRACTA variety of transition-metal films have been grown by organometallic chemical vapor deposition (OMCVD) at low temperatures using hydrocarbon or hydrido-carbonyl metal complexes as precursors. The vapors of the metal complexes are transported with argon as the carrier gas, adding H2 to the stream shortly before contact with a heated substrate.High-purity platinum films have been grown using (η5−C5H5)PtMe3 [1] or (η5−CH3C5H4)PtMe3 [2] at substrate temperatures of 180°C or 120°C, respectively. The incorporation of a methyl substituent on the cyclopentadienyl ligand decreases the melting point of the organoplatinum complex from 106°C [1] to 30°C [2] and increases the vapor pressure substantially. Film deposition also occurs at a lower substrate temperature. Analyses by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) indicate that the films are well crystallized and do not contain any observable impurities after sputter cleaning.The substrate temperatures for the first appearance of other transition-metal films from organometallic precursors are as follows (°C): Rh(η3−C3H5)3 (120/Si), Ir(η3-C3H5)3 (100/Si), HRe(CO)5 (130/Si) and Ni(η5−CH3C5H4)2 (190/glass, 280/Si). These films are essentially amorphous and contain trace oxygen impurities (< 2%), except for the Re film, which was 10% oxygen and 20%carbon.

Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)2, Sr(methd)2, and Ti(MPD)(tmhd)2

1999 ◽  
Vol 14 (10) ◽  
pp. 3988-3994 ◽  
Author(s):  
Jung-Hyun Lee ◽  
Shi-Woo Rhee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Tetraethylene Glycol ◽  
Step Coverage ◽  
Liquid Injection ◽  
Direct Liquid Injection

Deposition characteristics of (Ba,Sr)TiO3 (BST) thin films by metalorganic chemical vapor deposition with a mixture solution were investigated. Ba(methd)2 (methd = methoxyethoxytetramethylheptanedionate), Sr(methd)2, and Ti(MPD)2(tmhd)2 (MPD = methylpentanedioxy, tmhd = tetramethylheptanedionate) were dissolved together in methanol solvent. Mass spectrometry showed that Ba(methd)2 was less aggregated than Ba(tmhd)2-tetraglyme adduct (tetraglyme = tetraethylene glycol dimethyl ether) in the gas phase. Similar results were obtained from Sr precursors. Step coverage and electrical properties of the BST films were investigated as a function of deposition temperature from 350 to 600 °C. With the increase of the deposition temperature up to 500 °C, Ti composition in the films was increased, but Ba and Sr remained almost constant, and the step coverage became poor. Also, leakage current density and SiO2 equivalent oxide thickness was reduced as the deposition temperature increased. Poor incorporation of Ti below the deposition temperature of 500 °C was observed.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized
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