Highly Conformal Diffusion Barriers of Amorphous Niobium Nitride

1999 ◽  
Vol 564 ◽  
Author(s):  
R. G. Gordon ◽  
X. Liu ◽  
R. N. R. Broomhall-Dillard ◽  
Y. Shi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Niobium Nitride ◽  
Diffusion Barriers ◽  
X Rays ◽  
Electrically Conductive ◽  
Conductive Films ◽  
Step Coverage ◽  
Substrate Temperatures

AbstractElectrically conductive films of niobium nitride were formed by chemical vapor deposition from tetrakis(diethylamido)niobium and ammonia. The films were found to be highly conformal, with step coverage nearly 100% for substrate temperatures near 350°C. The structure of the films was amorphous by diffraction of X-rays and electrons. The reliability of the films as barriers to diffusion of copper was also tested.

Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
J. G. Fleming ◽  
E. Roherty-Osmun ◽  
J. S. Custer
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Deposition Rates ◽  
Step Coverage ◽  
Sputter Deposited

AbstractWe have used chemical vapor deposition to grow ternary tungsten based diffusion barriers to determine if they exhibit properties similar to those of sputter deposited ternaries. A range of different W-Si-N compositions were produced. The deposition temperature was low, 350°C, and the precursors used are accepted by the industry. Deposition rates are acceptable for a diffusion barrier application. Resistivities range from 350 to 20000 μΩ-cm, depending on composition. Step coverage of films with compositions expected to be of interest for diffusion barrier applications is 100%.

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Decrease in Deposition Rate and Improvement of Step Coverage by CF4Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 330-336 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Step Coverage

scholarly journals X-Rays Response of Diamond Detectors Constructed Using Diamond Layers Produced by Low Power Microwave Chemical Vapor Deposition Reactor

2015 ◽  
Vol 127 (5) ◽  
pp. 1555-1559
Author(s):  
A.J. Kordyasz ◽  
A. Bednarek ◽  
M. Kowalczyk ◽  
J. Tarasiuk ◽  
E. Kulczycka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Power ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Rays ◽  
Chemical Vapor Deposition Reactor ◽  
Power Microwave
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