How free exciton–exciton annihilation lets bound exciton emission dominate the photoluminescence of 2D-perovskites under high-fluence pulsed excitation at cryogenic temperatures

2021 ◽  
Vol 129 (12) ◽  
pp. 123101
Author(s):  
Milian Kaiser ◽  
Yang Li ◽  
Jonas Schwenzer ◽  
Marius Jakoby ◽  
Isabel Allegro ◽  
...  
Keyword(s):  
Free Exciton ◽  
Cryogenic Temperatures ◽  
High Fluence ◽  
Pulsed Excitation ◽  
Exciton Emission ◽  
Exciton Annihilation

Anthracene fluorescence at low temperatures. I. Purified single crystals

1972 ◽  
Vol 25 (7) ◽  
pp. 1411 ◽  
Author(s):  
LE Lyons ◽  
LJ Warren
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Fluorescence Spectrum ◽  
Low Temperatures ◽  
Free Exciton ◽  
Deformation Bands ◽  
Exciton Emission ◽  
Polarized Emission ◽  
Impurity Bands ◽  
Phonon Structure

The low-temperature fluorescence spectrum of purified vapour-grown anthracene single crystals is presented and the free-exciton emission distinguished from a number of defect or impurity bands present even in the purest crystals. In assigning the observed bands the symmetry of the active vibrations and the origin of background fluorescence and deformation bands are discussed. The phonon structure in the region of the fluorescence origin was found to be almost completely b-polarized. Emission of electronic origin (25103 cm-1) was too weak to be observed. Polarization ratios of the principal vibronio bands at 5.6 K are given.

The simultaneous emergence of free exciton emission and d0 ferromagnetism for undoped ZnO nanoparticles

RSC Advances ◽  
2016 ◽  
Vol 6 (87) ◽  
pp. 83909-83915 ◽  
Author(s):  
Srabantika Ghose ◽  
N. Gogurla ◽  
R. Ranganathan ◽  
D. Jana
Keyword(s):  
Zno Nanoparticles ◽  
Mechanical Milling ◽  
Free Exciton ◽  
Exciton Emission ◽  
Excitonic Emission ◽  
D0 Ferromagnetism

Free excitonic emission is observed for the ferromagnetic undoped ZnO nanoparticles prepared by mechanical milling.

Thermal dependence of free exciton emission in ultraviolet cathodoluminescence of colloidal ZnS

2016 ◽  
Vol 178 ◽  
pp. 134-138 ◽  
Author(s):  
Hong Van Bui ◽  
Van Ben Pham ◽  
Si Dang Le ◽  
Nam Nhat Hoang
Keyword(s):  
Free Exciton ◽  
Thermal Dependence ◽  
Exciton Emission

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

2007 ◽  
Vol 556-557 ◽  
pp. 427-430 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
N.S. Savkina ◽  
Alexey N. Kuznetsov
Keyword(s):  
Activation Energy ◽  
Emission Band ◽  
Room Temperature ◽  
Free Exciton ◽  
Charge Carriers ◽  
Full Width ◽  
Half Maximum ◽  
Exciton Annihilation ◽  
Increasing Temperature ◽  
Injection Electroluminescence

We present the injection electroluminescence spectra in the temperature range 290-760 K of 3C-SiC pn structure, which was fabricated by sublimation epitaxy in vacuum on 6H-SiC substrate. The dominant emission band of injection electroluminescence (IEL) spectrum was observed in the green region; at room temperature the IEL intensity outside the region of hν ≈ 2.0- 2.5 eV was less than 3% of that of the green peak. The peak parameters at room temperature are: hνmax ≈ 2.32 eV, full width at half maximum w ≈ 100 meV. The green peak shifted in the longwave direction with increasing temperature; the hνmax (T) dependence was linear with the slope of - 1.3x10-4 eV/K. Both the IEL intensity of the green peak at hνmax and band width w increased upon heating. The w(T) dependence was linear with the slope of 4.6x10-4 eV/K; intensity increased with the activation energy of 70 meV. The green IEL band can be considered to be due to the free exciton annihilation or to the band-band recombination and edge IEL increasing with rising temperature can be explained by the nonequilibrium charge carriers lifetime increasing.

6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

2005 ◽  
Vol 108-109 ◽  
pp. 713-716 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Alexander A. Lebedev ◽  
A.E. Cherenkov ◽  
Alexey N. Kuznetsov ◽  
Alla S. Tregubova ◽  
...  
Keyword(s):  
Quantum Well ◽  
Free Exciton ◽  
High Current ◽  
Excess Current ◽  
Forward Current ◽  
Current Voltage ◽  
Barrier Type ◽  
Current Voltage Characteristics ◽  
Exciton Annihilation ◽  
Injection Electroluminescence

Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.

scholarly journals Temperature dependence of the LO phonon sidebands in free exciton emission of GaN

2006 ◽  
Vol 99 (7) ◽  
pp. 073508 ◽  
Author(s):  
S. J. Xu ◽  
G. Q. Li ◽  
S.-J. Xiong ◽  
C. M. Che
Keyword(s):  
Temperature Dependence ◽  
Free Exciton ◽  
Exciton Emission

Temperature dependence of the free-exciton-emission linewidth in high-purity InP

1995 ◽  
Vol 52 (4) ◽  
pp. R2273-R2276 ◽  
Author(s):  
R. Benzaquen ◽  
R. Leonelli ◽  
S. Charbonneau ◽  
P. J. Poole ◽  
A. P. Roth
Keyword(s):  
Temperature Dependence ◽  
High Purity ◽  
Free Exciton ◽  
Exciton Emission
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