Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Performance ◽  
Cost Effective ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Lift Off ◽  
Lattice Matched

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Growth and Characterization of In-Based Nitride Compounds and their Double Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
V. A. Joshkin ◽  
J. C Roberts ◽  
E. L. Piner ◽  
M. K. Behbehani ◽  
F. G. McIntosh ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Growth Conditions ◽  
Excitation Power ◽  
Excitation Power Density ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Recombination Lifetime ◽  
Pl Spectra ◽  
Double Heterostructures

ABSTRACTWe report on the growth and characterization of InGaN bulk films and AlGaN/InGaN/AlGaN double heterostructures (DHs). Good quality bulk InGaN films have been grown by metalorganic chemical vapor deposition (MOCVD) with up to 40% InN as characterized by x-ray diffraction. The effect of hydrogen in the growth ambient on the lnN% incorporation in the InGaN films is presented. Photoluminescence (PL) spectra of AlGaN/InGaN/AlGaN DHs exhibit emission wavelengths from the violet through yellow depending on the growth conditions of the active InGaN layer. The PL spectra are fairly broad both at room temperature and 20 K, and could be a result of native defects or impurity related transitions. We also observed a linear dependence between the PL intensity and excitation power density in the 0.001 W/cm2 to 10 MW/cm2 range. Time resolved PL of one of these DHs suggest a recombination lifetime on the order of 520 ps.

Nitride Laser Diodes With InGaN Based Mqw Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
Lisa Sugiura ◽  
Jobji Nishio ◽  
Masaaki Onomura ◽  
Shin-Ya Nunoue ◽  
Kazuhiko Itaya ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Performance ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Dislocation Motion ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mocvd Growth ◽  
Short Wavelength Light ◽  
Nitride Laser

AbstractAdvantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Injection ◽  
Light Emitting ◽  
Si Substrates ◽  
Electron Confinement ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Electroluminescence Emission

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Time Resolved ◽  
Iron Disilicide ◽  
Light Emitting ◽  
Si Substrates ◽  
Carrier Recombination ◽  
Double Heterostructures ◽  
Time Resolved Photoluminescence

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

scholarly journals Rational design and characterization of heteroleptic phosphorescent iridium(iii) complexes for highly efficient deep-blue OLEDs

2016 ◽  
Vol 4 (43) ◽  
pp. 10246-10252 ◽  
Author(s):  
Yansong Feng ◽  
Xuming Zhuang ◽  
Dongxia Zhu ◽  
Yu Liu ◽  
Yue Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Rational Design ◽  
Organic Light Emitting Diodes ◽  
Iridium Complexes ◽  
High Luminance ◽  
Light Emitting ◽  
Deep Blue ◽  
Organic Light ◽  
Low Efficiency

Deep-blue phosphorescent organic light emitting diodes (PhOLEDs) based on new heteroleptic iridium complexes achieve remarkably high performance with low efficiency roll-off at high luminance.

Growth of High Quality InGaN Films by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. McIntosh ◽  
K. S. Boutros ◽  
S. M. Bedair ◽  
M. Moussa ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Visible Spectrum ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Double Heterostructures ◽  
High Vapor ◽  
Line Widths

ABSTRACTInGaN based optical devices can cover from the violet through orange regions of the visible spectrum. Difficulties in the growth of this alloy, which have impeded its applications, include problems such as the high vapor pressure of In, weak In-N bonds and lack of sufficient nitrogen during growth. We report on the MOCVD growth of InxGa1−xN (0 < x < 0.4) on sapphire substrates in the 750 - 800 °C temperature range. X-ray diffraction data show full width at half maximum line widths as narrow as 250 arcsec for low values of x, while films with higher lnN% exhibit broader line widths. Room temperature photoluminescence spectra exhibit band edge emission, with emission from deep levels increasing with x. Preliminary investigations of AlGaN/lnGaN/AlGaN double heterostructures have been conducted.

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