Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Performance ◽  
Cost Effective ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Lift Off ◽  
Lattice Matched

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells

2016 ◽  
Author(s):  
Yongkun Sin ◽  
Mark Peterson ◽  
Zachary Lingley ◽  
Stephen LaLumondiere ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Dynamics ◽  
Double Heterostructures ◽  
Lift Off

Epitaxial lift-off CdTe/MgCdTe double heterostructures for thin-film and flexible solar cells applications

2021 ◽  
Vol 118 (18) ◽  
pp. 181101
Author(s):  
Jia Ding ◽  
Cheng-Ying Tsai ◽  
Zheng Ju ◽  
Yong-Hang Zhang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Double Heterostructures ◽  
Lift Off

A recent overview on the porphyrin-based π-extended small molecules as donors and acceptors for high-performance organic solar cells

2021 ◽  
Author(s):  
Venkatesh Piradi ◽  
Feng Yan ◽  
Xunjin Zhu ◽  
Wai-Yeung Raymond Wong
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Small Molecules ◽  
Organic Solar Cells ◽  
High Performance ◽  
Cost Effective ◽  
Effective Alternative ◽  
The Past ◽  
Cost Effective Alternative ◽  
Silicon Based

Organic solar cells (OSCs) have been considered as a promising cost-effective alternative to silicon-based solar cell counterparts due to their lightweight, mechanical flexibility, and easy fabrication features. Over the past...

Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Epitaxial Lifted-Off Thin Film GaInP/GaAs/GaInNAsSb Lattice-Matched Triple Junction Solar Cells

2019 ◽  
Author(s):  
Naoya Miyashita ◽  
Nazmul Ahsan ◽  
Yoshitaka Okada ◽  
Rao Tatavarti ◽  
Andree Wibowo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Lattice Matched

Charge carrier dynamics in small-molecule- and polymer-based donor-acceptor blends

2014 ◽  
Vol 1733 ◽  
Author(s):  
Keshab Paudel ◽  
Brian Johnson ◽  
Mattson Thieme ◽  
John E. Anthony ◽  
Oksana Ostroverkhova
Keyword(s):  
Optical Absorption ◽  
Charge Carrier ◽  
High Performance ◽  
Continuous Wave ◽  
Carrier Dynamics ◽  
Bulk Heterojunctions ◽  
Time Resolved ◽  
Charge Carrier Dynamics ◽  
Donor Acceptor ◽  
532 Nm

ABSTRACTWe present a comparative study of optical absorption, photoluminescence (PL), and photoconductivity in bulk heterojunctions comprising a high performance functionalized anthradithiophene (ADT) derivative or the benchmark polymer P3HT as donor and functionalized pentacene (Pn) derivative or PCBM as acceptor. Of all D/A blends studied, the ADT/PCBM blend exhibited the highest charge photogeneration efficiencies under 532 nm excitation, leading to the highest amplitudes of time-resolved and continuous wave (cw) photocurrents. At nanosecond time scales after photoexcitation, both ADT-TES-F-based blends and the P3HT/Pn-TIPS-F8 blend exhibited photocurrents which were higher by a factor of 2-10, depending on the blend, than that in the P3HT/PCBM blend. However, cw photocurrents showed a different trend, with the ADT-TES-F/PCBM blend exhibiting only a factor of ∼2.5 higher photoresponse than that in the P3HT/PCBM blends, and the ADT-TES-F- and P3HT- based blends with Pn-TIPS-F8 showing a factor of ∼1.5-2.5 lower photoresponse than that in the P3HT/PCBM blend, due to other contributions, such as that of charge trap-limited transport, to cw photoresponse.

Understanding of carrier dynamics, heterojunction merits and device physics: towards designing efficient carrier transport layer-free perovskite solar cells

2020 ◽  
Vol 49 (2) ◽  
pp. 354-381 ◽  
Author(s):  
Jin-Feng Liao ◽  
Wu-Qiang Wu ◽  
Yong Jiang ◽  
Jun-Xing Zhong ◽  
Lianzhou Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Transport ◽  
Perovskite Solar Cells ◽  
Carrier Dynamics ◽  
Transport Layer ◽  
Device Physics ◽  
Recent Advances

This review summarizes recent advances in the carrier transport layer-free perovskite solar cells and elucidates the fundamental carrier dynamics, heterojunction merits and device physics towards mysterious high performance.

scholarly journals Solution-Processed PEDOT:PSS/MoS2 Nanocomposites as Efficient Hole-Transporting Layers for Organic Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1328 ◽  
Author(s):  
Madeshwaran Sekkarapatti Ramasamy ◽  
Ka Yeon Ryu ◽  
Ju Won Lim ◽  
Asia Bibi ◽  
Hannah Kwon ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
High Performance ◽  
Hybrid Film ◽  
Acid Methyl Ester ◽  
Cost Effective ◽  
Charge Transfer Resistance ◽  
Electrical Impedance Spectroscopy ◽  
Transfer Resistance ◽  
Hole Transporting

An efficient hole-transporting layer (HTL) based on functionalized two-dimensional (2D) MoS2-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composites has been developed for use in organic solar cells (OSCs). Few-layer, oleylamine-functionalized MoS2 (FMoS2) nanosheets were prepared via a simple and cost-effective solution-phase exfoliation method; then, they were blended into PEDOT:PSS, a conducting conjugated polymer, and the resulting hybrid film (PEDOT:PSS/FMoS2) was tested as an HTL for poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs. The devices using this hybrid film HTL showed power conversion efficiencies up to 3.74%, which is 15.08% higher than that of the reference ones having PEDOT:PSS as HTL. Atomic force microscopy and contact angle measurements confirmed the compatibility of the PEDOT:PSS/FMoS2 surface for active layer deposition on it. The electrical impedance spectroscopy analysis revealed that their use minimized the charge-transfer resistance of the OSCs, consequently improving their performance compared with the reference cells. Thus, the proposed fabrication of such HTLs incorporating 2D nanomaterials could be further expanded as a universal protocol for various high-performance optoelectronic devices.

Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers

2016 ◽  
Vol 4 (10) ◽  
pp. 3798-3805 ◽  
Author(s):  
Jiahua Tao ◽  
Leilei Chen ◽  
Huiyi Cao ◽  
Chuanjun Zhang ◽  
Junfeng Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Performance ◽  
Cost Effective ◽  
Fine Tuning ◽  
Thin Film Solar Cells ◽  
Electrodeposition Process ◽  
Photovoltaic Materials ◽  
Zn Content ◽  
Cu2znsns4 Thin Film

A simple and cost-effective co-electrodeposition process has been demonstrated to fabricate high-performance Cu2ZnSnS4 (CZTS) photovoltaic materials with composition tunability and phase controllability.

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