High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Injection ◽  
Light Emitting ◽  
Si Substrates ◽  
Electron Confinement ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Electroluminescence Emission

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

High performance organic light emitting diodes using substoichiometric tungsten oxide as efficient hole injection layer

2012 ◽  
Vol 13 (5) ◽  
pp. 796-806 ◽  
Author(s):  
Maria Vasilopoulou ◽  
George Papadimitropoulos ◽  
Leonidas C. Palilis ◽  
Dimitra G. Georgiadou ◽  
Panagiotis Argitis ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Organic Light

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 871 ◽  
Author(s):  
Abu Islam ◽  
Dong-Soo Shim ◽  
Jong-In Shim
Keyword(s):  
Potential Energy ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Energy Fluctuation ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (FPZ), the crystal quality, and the internal quantum efficiency increase with the sample’s indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, FPZ, and indium compositions.

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
Sign in / Sign up

Export Citation Format

Share Document