Properties Of Homoepitaxially Mbe-Grown Gan

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Suski ◽  
J. Krueger ◽  
C. Kisielowski ◽  
P. Phatak ◽  
M. S. H. Leung ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Chemical Vapor Deposition Method ◽  
Bulk Crystals ◽  
Acceptor Pair ◽  
Dominant Band ◽  
Bulk Single Crystals ◽  
Donor Acceptor

AbstractBulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near bandedge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metalorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Photoluminescence of GaN Grown by Molecular Beam Epitaxy on Freestanding GaN Template

2002 ◽  
Vol 722 ◽  
Author(s):  
M. A. Reshchikov ◽  
F. Yun ◽  
D. Huang ◽  
L. He ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Broad Band ◽  
Shallow Donor ◽  
Binding Energies ◽  
Main Peak ◽  
Acceptor Pair ◽  
Pl Spectra ◽  
Frequency Plasma ◽  
Donor Acceptor

AbstractWe studied photoluminescence (PL) of GaN layers grown by molecular beam epitaxy on freestanding high-quality GaN templates. The layers with thickness of ∼ 1 νm were grown under Ga-rich conditions using radio-frequency plasma as a nitrogen source. The PL spectra from both the epilayer and the substrate contain a plethora of very sharp peaks related to excitonic transitions. Through the analysis of the excitonic part of the spectra, we have identified two shallow donors with the binding energies of 28.8 and 32.6 meV, attributed to SiGa and ON, respectively. The PL spectra involved also emissions due to shallow donor-acceptor pair transitions with the main peak at 3.26 eV and a broad band peaking at ∼2.5 - 2.6 eV (green band). The green bands in the GaN substrate and GaN overgrown layer have different energy positions invoking the suggestion that they must have their genesis in different defect centers.

Study of Indium Oxide Rod-Like Structures Synthesized Using Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 15-17 ◽  
pp. 169-174
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Light Emission ◽  
Morphological Changes ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Selected Area Electron Diffraction ◽  
Metalorganic Chemical

We have investigated the morphological changes with varying the substrate temperature in the range of 350-400°C, in synthesizing the indium oxide (In2O3) rod-like structures by using the metalorganic chemical vapor deposition method. The as-synthesized rod-like structures was aligned perpendicular to the Si substrate. X-ray diffraction (XRD) and selected area electron diffraction (SAED) analyses demonstrated that the rods had a cubic In2O3 structure. PL spectra of the In2O3 rod-like structures exhibited the visible light emission. We discussed the possible growth mechanisms.

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