Light Emission From Erbium Doped Si1-x XGe1Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J H Evans-Freeman ◽  
A T Naveed ◽  
M Q Huda ◽  
A R eaker ◽  
D C oughton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Concentration Profile ◽  
Light Emission ◽  
Forward Bias ◽  
Silicon Layer ◽  
Spatial Location ◽  
Detailed Mechanism ◽  
Erbium Doped ◽  
Er Doped

AbstractUHVCVD-grown SiO.s 7Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54ýim have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

Segregation effects and bandgap engineering in InGaN quantum-well heterostructures

2002 ◽  
Vol 743 ◽  
Author(s):  
Kirill A. Bulashevich ◽  
Sergey Yu. Karpov ◽  
Roman A. Talalaev ◽  
Igor Yu. Evstratov ◽  
Yuri N. Makarov
Keyword(s):  
Quantum Well ◽  
Surface Segregation ◽  
Light Emission ◽  
Forward Bias ◽  
Emission Spectra ◽  
Layer Growth ◽  
Composition Profile ◽  
Bandgap Engineering ◽  
Single Quantum Well ◽  
Coupled Solution

ABSTRACTThe analysis of In surface segregation and its impact on the composition profile and light emission spectra of the InGaN single quantum well heterostructures grown by Metalorganic Vapor Phase Epitaxy (MOVPE) is carried out by coupled solution of the Poisson and Schrödinger equations. Effective methods of controlling the composition profile, indium predeposition and temperature ramping during the cap layer growth are considered in terms of surface segregation model. General trends in spectra transformation upon the forward bias variation and their correlations with the quantum well electronic structure are discussed.

1.54 μm Electroluminescence from Erbium Doped Gallium Phosphide Diodes

1996 ◽  
Vol 422 ◽  
Author(s):  
G. M. Ford ◽  
B. W. Wessels
Keyword(s):  
Gallium Phosphide ◽  
Room Temperature ◽  
Radiative Decay ◽  
Forward Bias ◽  
Temperature Characteristic ◽  
Excitation Power ◽  
Optically Active ◽  
Erbium Doped ◽  
Current Densities ◽  
Er Doped

AbstractEr-doped GaP diodes that exhibit strong room temperature characteristic 4f-shell luminescence under forward bias have been fabricated. The output of the diode increases linearly with current for low current densities but eventually saturates. The radiative decay lifetime is 2.6 msec and is independent of current. It is proposed that the observed intensity dependence on excitation power results from saturation of the optically active Er3+ centers. Some diodes showed a superlinear dependence, with a threshold of about 2 A/cm2.

scholarly journals Phase transformation and light emission in Er-doped Si-rich HfO2 films prepared by magnetron sputtering

2019 ◽  
Vol 37 (3) ◽  
pp. 031503 ◽  
Author(s):  
Tetyana Torchynska ◽  
Brahim El Filali ◽  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Fabrice Gourbilleau
Keyword(s):  
Phase Transformation ◽  
Magnetron Sputtering ◽  
Light Emission ◽  
Er Doped

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

scholarly journals Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1981-1988 ◽  
Author(s):  
Ning Li ◽  
Ying Suet Lau ◽  
Yanqin Miao ◽  
Furong Zhu
Keyword(s):  
Visible Light ◽  
High Speed ◽  
Light Emission ◽  
Forward Bias ◽  
Green Light ◽  
Visible Light Communication ◽  
Light Emitting ◽  
Response Characteristics ◽  
Photo Response ◽  
Halide Perovskite

AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

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