On the Electrical and Photoluminescence Properties of Erbium Doped ZnO Thin Film

2012 ◽  
Vol 1471 ◽  
Author(s):  
Liang-Chiun Chao ◽  
Chung-Chi Liau ◽  
Wan-Chun Chang
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Ion Beam ◽  
Processing Conditions ◽  
Photoluminescence Properties ◽  
Dual Beam ◽  
Erbium Doped ◽  
Doped Zno ◽  
Er Doped ◽  
Ion Beam Sputter Deposition

ABSTRACTEr doped ZnO (Er:ZnO) thin films with Er concentration from 0.1 to 3.6 at. % were prepared by dual beam ion beam sputter deposition at room temperature. Experimental results show that as Er concentration increases from 0.1 to 1.1 at. %, the resistivity of the as-deposited Er:ZnO film decreases from 560 Ω·cm to a minimum of 0.23 Ω·cm, while further increasing Er concentration to 3.6 at. % results in increase of the resistivity to 4.2 kΩ·cm. The as-deposited Er:ZnO with Er concentration of 1.1 at.% also exhibits the highest carrier concentration of 2.3×1019 cm-3. None of the as-deposited Er:ZnO films show 1.5 μm emission without post-growth annealing. Er:ZnO film with Er concentration at 0.5~1.1 at.% shows the strongest 1.5 μm emission after annealing at 700 ~ 900°C, while all the Er:ZnO film becomes semi-insulating after annealing. The discrepancy between the processing conditions for optimized carrier concentration and optimized optically activated Er ions may due to the formation of the pseudo-octahedral structure after annealing that favors the 1.5 μm emission.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Ferromagnetism properties of Er-doped ZnO: a GGA + U study

RSC Advances ◽  
2016 ◽  
Vol 6 (109) ◽  
pp. 107865-107870 ◽  
Author(s):  
Sanjun Wang ◽  
Xiaobo Shi ◽  
Jinming Li
Keyword(s):  
Magnetic Moment ◽  
First Principles ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
First Principles Calculation ◽  
Doped Zno ◽  
Er Doped ◽  
Zn Vacancy

Our first-principles calculation finds that only the Zn vacancy can induce a 1.0 μB magnetic moment in Er-doped ZnO, which comes from the unpaired 2p electrons at the ligand O atom and results in the room-temperature ferromagnetism property of ZnO.

Ferromagnetic and Optical Properties of Partially Cu-Doped ZnO Films

2009 ◽  
Vol 64 (11) ◽  
pp. 765-768 ◽  
Author(s):  
Fan-Yong Ran ◽  
Masaki Tanemura ◽  
Yasuhiko Hayashi ◽  
Norihiro Ide ◽  
Masao Imaoka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Room Temperature Ferromagnetism ◽  
Intrinsic Property ◽  
Zno Films ◽  
Cu Doping ◽  
Partial Area ◽  
Doped Zno

Wurtzite structure ZnO films (3×3 mm2) with a partial-area Cu doping were successfully prepared using a micro-area Ar+-ion beam (~ 380 μm in diameter) and a simultaneous Cu supply at room temperature. A Cu2O phase was formed in the ZnO films by Cu doping. The partially Cu-doped ZnO films exhibited room-temperature ferromagnetism (RTFM) with a saturation magnetization of 1.6×10−5 emu and a coercive field of 40 Oe. Since Zn, Cu, and their compounds are not ferromagnetic, the observed RTFMis attributed to the intrinsic property of Cu-doped ZnO films. As confirmed by the low temperature photoluminescence (PL) spectra, no serious optical damage was recognized in the region without Ar+-ion irradiation. Thus, it was believed that the micro-area Ar+-ion irradiation with a simultaneous Cu supply was promising to integrate the magnetic and optical properties of ZnO-based materials.

scholarly journals Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Temperature Dependence ◽  
Layer Thickness ◽  
Luminescence Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Excitation Rate ◽  
Erbium Doped ◽  
Order Of Magnitude ◽  
Er Doped

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Sol–gel synthesis of erbium-doped ZnO with nest structure for photocatalysis

2018 ◽  
Vol 11 (01) ◽  
pp. 1750082 ◽  
Author(s):  
Chun Li ◽  
Zuoyun Yan ◽  
Yuan Zhou ◽  
Shuang Zhao ◽  
Xiaotao Zhang ◽  
...  
Keyword(s):  
Uv Light ◽  
Sol Gel ◽  
Kinetic Studies ◽  
Bandgap Energy ◽  
Nest Structure ◽  
Er Doping ◽  
Erbium Doped ◽  
Doped Zno ◽  
Er Doped ◽  
Sol Gel Synthesis

Rare earth erbium-doped ZnO samples were synthesized via a facile sol–gel method. The influences of Er-doping on structural properties, morphological features and optical properties were characterized by XRD, BET, SEM and UV–Vis DRS techniques. The results showed that the as-synthesized products were well crystallined in the absence of impurity phases and Er-doping resulted in the reduction of bandgap energy deducted from the UV–Vis DRS results. Amongst the samples, layer-like 0.5% Er-doped ZnO with nest structure achieved the highest photodegradation (90.7%) of methylene blue (MB) after UV light irradiation for 2[Formula: see text]h. The kinetic studies of MB degradation over different Er-doped ZnO were also conducted and proved to obey the pseudo-first-order kinetics.

Thermoelectricity of Al-doped ZnO at different carrier concentrations

2007 ◽  
Vol 22 (7) ◽  
pp. 1942-1946 ◽  
Author(s):  
Yoshiaki Kinemuchi ◽  
Chihiro Ito ◽  
Hisashi Kaga ◽  
Tomohiro Aoki ◽  
Koji Watari
Keyword(s):  
High Temperature ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Power Factor ◽  
Room Temperature ◽  
Boltzmann Constant ◽  
Zinc Oxides ◽  
Impurity Doping ◽  
Doped Zno ◽  
High Temperature Operation

Optimization of the carrier concentration is a key to improve the power factor of thermoelectricity. The carrier concentration of sintered zinc oxides was primarily controlled by impurity doping of aluminum and secondarily adjusted by defect concentration by varying the oxygen partial pressure in the range of 101 to 104 Pa. The resultant carrier concentration measured at room temperature ranged from 1 to 1.8 × 1020 cm−3, which drastically modified the thermoelectricity. The Jonker plot of the measured Seebeck coefficient and conductivity revealed deviation of the slope from k/e (where k is the Boltzmann constant and e is the elemental electric charge), which was attributed to a mobility variation with respect to the carrier concentration. The approach to estimating the optimum conductivity taking into account mobility variation is discussed. Finally, the optimum conductivity is estimated to be 1800 to 2000 S/cm for high-temperature operation (500 to 800 °C).

Carrier Concentration Effect of Cu-Doped ZnO Films for Room Temperature Ferromagnetism

2012 ◽  
Vol 51 (10R) ◽  
pp. 103003 ◽  
Author(s):  
Zhiwei Ai ◽  
Hao Wu ◽  
Ying Lin ◽  
Zhongpo Zhou ◽  
Sheng Wang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Concentration Effect ◽  
Zno Films ◽  
Doped Zno

scholarly journals Growth of Cu2O Nanopyramids by Ion Beam Sputter Deposition

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
Assamen Ayalew Ejigu
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Ion Beam ◽  
Linear Sweep Voltammetry ◽  
Sputter Deposition ◽  
Exciton Luminescence ◽  
X Ray Diffraction ◽  
Linear Sweep ◽  
X Ray ◽  
Ion Beam Sputter Deposition

In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge and height lengths. Both X-ray diffraction and Raman spectroscopy characterizations showed the structures were single-phase polycrystalline Cu2O, and the room-temperature photoluminescence investigation showed interestingly green and blue exciton luminescence emissions. All Mott—Schottky, linear sweep voltammetry, and photocurrent measurements indicated that the conductivity of the Cu2O pyramids is of n-type.

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