To Probe the Absorption Edge of Porous Silicon by Erbium

1996 ◽  
Vol 422 ◽  
Author(s):  
Xinwei Zhao ◽  
Shuji Komuro ◽  
Shinya Maruyama ◽  
Hideo Isshiki ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Absorption Edge ◽  
Room Temperature ◽  
Energy Transfer Process ◽  
Photoluminescence Excitation ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Silicon Materials ◽  
Good Probe ◽  
Absorption Edges

Intra-4f-transitions from erbium atoms are proposed as a probe to determine absorption edges of the hosts. This idea was firstly applied on erbium-doped porous silicon materials. Intense and sharp 1.54 μm luminescence from erbium triply ionized ions as well as visible emissions from porous silicon were observed up to room temperature. Photoluminescence excitation spectroscopy investigations of the samples indicate identical absorption edges for both the 1.54 μm and the visible emissions. No 1.54 μm luminescence can be observed by directly exciting the erbium triply ionized ions. This fact suggests that the erbium ions are excited by energy transfer process from the excited carriers in the hosts. From this result, we can propose that erbium could behave as a good probe to determine the absorption edge or the bandgap of the host material even it is not luminescent.

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Van Buuren ◽  
S. Eisebitt ◽  
S. Patitsas ◽  
S. Ritchie ◽  
T. Tiedje ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Absorption Edge ◽  
Photoelectron Spectroscopy ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Preparation Conditions ◽  
Peak Energy

ABSTRACTThe peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.

scholarly journals Photoluminescence of Erbium-Doped Glasses 70 Ga2S3 – 30 La2S3

2018 ◽  
Vol 19 (4) ◽  
pp. 331-335
Author(s):  
V.V. Halyan ◽  
I.A. Ivashchenko ◽  
A.H. Kevshyn ◽  
I.D. Olekseyuk ◽  
P.V. Tishchenko
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Room Temperature ◽  
Energy Transition ◽  
Optical Absorption Spectra ◽  
Photoluminescence Spectra ◽  
Transition Diagram ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Doped Glasses

Glasses of the composition (70–X) mol.% Ga2S3 - 30 mol.% La2S3 - X Er2S3 (at X = 0, 1, 3) were synthesized  and the optical absorption spectra at room temperature were studied. Photoluminescence spectra in the 2.53 - 0.73eV range at 300 and 80K were investigated. Intense PL maxima at 2.25, 1.88, 1.45, 1.26, 1.13, 0.81 eV were found which correspond to transitions in the f-shell of erbium ions. The redistribution of the intensity of PL peaks with temperature was analyzed based on the energy transition diagram of erbium ions.

Evidence of x-ray absorption-edge shift as a function of luminescence wavelength in porous silicon

2000 ◽  
Vol 62 (15) ◽  
pp. 9911-9914 ◽  
Author(s):  
G. Dalba ◽  
N. Daldosso ◽  
P. Fornasini ◽  
M. Grimaldi ◽  
R. Grisenti ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Absorption Edge ◽  
X Ray ◽  
Absorption Edge Shift ◽  
X Ray Absorption

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

scholarly journals Transformation Between 2D and 3D Covalent Organic Frameworks via Reversible [2+2] Cycloaddition

2020 ◽  
Author(s):  
Thaksen Jadhav ◽  
Yuan Fang ◽  
Cheng-Hao Liu ◽  
Afshin Dadvand ◽  
Ehsan Hamzehpoor ◽  
...  
Keyword(s):  
Band Structure ◽  
Absorption Edge ◽  
Room Temperature ◽  
Three Dimensional ◽  
Cross Linking ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
Doping Behavior ◽  
2D Polymers ◽  
2D And 3D

We report the first transformation between crystalline vinylene-linked two-dimensional (2D) polymers and crystalline cyclobutane-linked three-dimensional (3D) polymers. Specifically, absorption-edge irradiation of the 2D poly(arylenevinylene) covalent organic frameworks (COFs) results in topological [2+2] cycloaddition cross-linking the π-stacked layers in 3D COFs. The reaction is reversible and heating to 200°C leads to a cycloreversion while retaining the COF crystallinity. The resulting difference in connectivity is manifested in the change of mechanical and electronic properties, including exfoliation, blue-shifted UV-Vis absorption, altered luminescence, modified band structure and different acid-doping behavior. The Li-impregnated 2D and 3D COFs show a significant ion conductivity of 1.8×10<sup>−4</sup> S/cm and 3.5×10<sup>−5</sup> S/cm, respectively. Even higher room temperature proton conductivity of 1.7×10<sup>-2</sup> S/cm and 2.2×10<sup>-3</sup> S/cm was found for H<sub>2</sub>SO<sub>4</sub>-treated 2D and 3D COFs, respectively.

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