Room-temperature electroluminescence from erbium-doped porous silicon composites for infrared LED applications

2000 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

To Probe the Absorption Edge of Porous Silicon by Erbium

1996 ◽  
Vol 422 ◽  
Author(s):  
Xinwei Zhao ◽  
Shuji Komuro ◽  
Shinya Maruyama ◽  
Hideo Isshiki ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Absorption Edge ◽  
Room Temperature ◽  
Energy Transfer Process ◽  
Photoluminescence Excitation ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Silicon Materials ◽  
Good Probe ◽  
Absorption Edges

Intra-4f-transitions from erbium atoms are proposed as a probe to determine absorption edges of the hosts. This idea was firstly applied on erbium-doped porous silicon materials. Intense and sharp 1.54 μm luminescence from erbium triply ionized ions as well as visible emissions from porous silicon were observed up to room temperature. Photoluminescence excitation spectroscopy investigations of the samples indicate identical absorption edges for both the 1.54 μm and the visible emissions. No 1.54 μm luminescence can be observed by directly exciting the erbium triply ionized ions. This fact suggests that the erbium ions are excited by energy transfer process from the excited carriers in the hosts. From this result, we can propose that erbium could behave as a good probe to determine the absorption edge or the bandgap of the host material even it is not luminescent.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

1995 ◽  
Vol 66 (7) ◽  
pp. 836-838 ◽  
Author(s):  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi ◽  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Room Temperature ◽  
Oxygen Radical ◽  
Porous Silicon Surface

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

High Power Cascaded Erbium Doped Fluoride Fiber Laser at Room Temperature

2016 ◽  
Vol 28 (6) ◽  
pp. 673-676 ◽  
Author(s):  
Jianfeng Li ◽  
Lele Wang ◽  
Hongyu Luo ◽  
Jitao Xie ◽  
Yong Liu
Keyword(s):  
Fiber Laser ◽  
High Power ◽  
Room Temperature ◽  
Erbium Doped ◽  
Fluoride Fiber

Observation of room-temperature resonant photoluminescence in porous silicon

2006 ◽  
Vol 35 (1) ◽  
pp. 151-156 ◽  
Author(s):  
A Kanjilal ◽  
M Song ◽  
K Furuya ◽  
B Mallik
Keyword(s):  
Porous Silicon ◽  
Room Temperature

Fabrication of Macroporous Silicon in Organic Electrolytes and their Luminescence

2017 ◽  
Vol 748 ◽  
pp. 127-131 ◽  
Author(s):  
Wu Lin Li ◽  
Wen Jing Yang ◽  
Mei Long ◽  
Gen Rong Li ◽  
Yan Ma ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Electrochemical Process ◽  
Macroporous Silicon ◽  
Organic Solution ◽  
Organic Electrolytes ◽  
Red Luminescence ◽  
Organic Solutions ◽  
Side Illumination ◽  
Nanoporous Layer

The quasi-regular arrangements porous silicon was fabricated by by electrochemical process using organic solutions with front-side illumination, and SEM showed that the morphology of porous silicon was dependent sensitively on the current density, organic electrolytes and their concentration. The results indicate that N-dimethylformamide (DMF) is the best organic solution and quasi-regular arranged pores can be well organized in 20%HF/DMF solution. The luminescence shows fresh porous silicon can emit the red luminescence at room temperature and quench after nanoporous layer destroyed.

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