Defect Engineering in SI:ER Technology

1996 ◽  
Vol 422 ◽  
Author(s):  
N. A. Sobolev ◽  
O. V. Alexandrov ◽  
M. S. Bresler ◽  
V. V. Emtsev ◽  
O. B. Gusev ◽  
...  
Keyword(s):  
Point Defects ◽  
Essential Role ◽  
Defect Formation ◽  
Defect Engineering ◽  
Intrinsic Point Defects ◽  
Related Donor ◽  
Non Equilibrium

AbstractRecent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects in Er-related defects formation for both implanted and in-diffused Si:Er structures is demonstrated.The data of electroluminescence (EL) measurements evidence that the Er3+ excitation occurs via capture of free excitons on neutral Er-related donor centers with subsequent Augerrecombination of bound excitons.

Role of induced quadrupoles in the simulation of intrinsic point defects in AgCl and NaCl

1993 ◽  
Vol 48 (10) ◽  
pp. 6839-6853 ◽  
Author(s):  
Radha D. Banhatti ◽  
Y. V. G. S. Murti
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects

Self Diffusion in SiC: the Role of Intrinsic Point Defects

2001 ◽  
Vol 353-356 ◽  
pp. 323-326 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects ◽  
Self Diffusion

An insight to the role of Cr in the process of intrinsic point defects in α-Al2O3

2016 ◽  
Vol 18 (9) ◽  
pp. 6734-6741 ◽  
Author(s):  
Xin Xiang ◽  
Guikai Zhang ◽  
Feilong Yang ◽  
Xuexing Peng ◽  
Tao Tang ◽  
...  
Keyword(s):  
Charge State ◽  
Point Defects ◽  
Significant Influence ◽  
Relative Stability ◽  
Equilibrium Configuration ◽  
Intrinsic Point Defects ◽  
Defect Process ◽  
Α Al2o3

Cr has significant influence on the formation, charge state, relative stability and equilibrium configuration of isolated intrinsic point defects in α-Al2O3, resulting in the variation of defect process in α-Al2O3.

Diffusion in Crystalline and Amorphous Solids

1985 ◽  
Vol 57 ◽  
Author(s):  
David Lazarus
Keyword(s):  
Point Defects ◽  
Amorphous Materials ◽  
Essential Role ◽  
Volume Diffusion ◽  
Bulk Diffusion ◽  
Amorphous Solids ◽  
Crystalline Solids ◽  
Simple Point ◽  
Diffusion Mechanisms

AbstractDecades of work by a wide variety of techniques were required to establish unambiguously the essential role of simple – and sometimes not so simple – “point” defects in mediating bulk diffusion in crystalline solids. Amorphous solids present new problems for establishing basic diffusion mechanisms. Most experimental techniques which work well for study of diffusion in crystalline solids are useless for study of amorphous materials because of their inherent nonequilibrium structures. A survey of some current results also gives a strong impression that more complex basic mechanisms than simple point defects may be required to account for volume diffusion in these materials.

The essential role of redox potential/equilibrium constant in the ability of non-equilibrium plasma for nano-synthesis in liquids

2020 ◽  
Vol 128 (4) ◽  
pp. 043305
Author(s):  
Van-Phuoc Thai ◽  
Hideto Furuno ◽  
Nobuo Saito ◽  
Kazumasa Takahashi ◽  
Toru Sasaki ◽  
...  
Keyword(s):  
Redox Potential ◽  
Equilibrium Constant ◽  
Essential Role ◽  
Equilibrium Plasma ◽  
Potential Equilibrium ◽  
Non Equilibrium

A Comparison of Intrinsic Point Defect Properties in Si and Ge

2008 ◽  
Vol 1070 ◽  
Author(s):  
Jan Vanhellemont ◽  
Piotr Spiewak ◽  
Koji Sueoka ◽  
Eddy Simoen ◽  
Igor Romandic
Keyword(s):  
Crystal Growth ◽  
Point Defect ◽  
Point Defects ◽  
Defect Formation ◽  
Lattice Defect ◽  
Intrinsic Point Defect ◽  
Thermal Treatments ◽  
Intrinsic Point Defects ◽  
Device Processing ◽  
Processing Point

ABSTRACTIntrinsic point defects determine to a large extent the semiconductor crystal quality both mechanically and electrically not only during crystal growth or when tuning polished wafer properties by thermal treatments, but also and not the least during device processing. Point defects play e.g. a crucial role in dopant diffusion and activation, in gettering processes and in extended lattice defect formation.Available experimental data and results of numerical calculation of the formation energy and diffusivity of the intrinsic point defects in Si and Ge are compared and discussed. Intrinsic point defect clustering is illustrated by defect formation during Czochralski crystal growth.

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication

2005 ◽  
Vol 108-109 ◽  
pp. 483-488 ◽  
Author(s):  
V.I. Vdovin ◽  
M.G. Mil'vidskii ◽  
M.M. Rzaev ◽  
Friedrich Schäffler
Keyword(s):  
Experimental Data ◽  
Low Temperature ◽  
Point Defects ◽  
Misfit Dislocation ◽  
Alloy Composition ◽  
Dislocation Nucleation ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Intrinsic Point Defects

We present experimental data on the effect of low-temperature buffer layers on the dislocation structure formation in SiGe/Si strained-layer heterostructures under thermal annealing. Specific subjects include mechanisms of misfit dislocation nucleation, propagation and multiplication as well as the role of intrinsic point defects in these processes. Samples with lowtemperature Si (400°C) and SiGe (250°C) buffer layers were grown by MBE. In general, the processes of MD generation occur similarly in the heterostructures studied independently of the alloy composition (Ge content: 0.15, 0.30) and kind of buffer layer. Intrinsic point defects related to the low-temperature epitaxial growth influence mainly the rate of misfit dislocation nucleation.

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