Role of induced quadrupoles in the simulation of intrinsic point defects in AgCl and NaCl

1993 ◽  
Vol 48 (10) ◽  
pp. 6839-6853 ◽  
Author(s):  
Radha D. Banhatti ◽  
Y. V. G. S. Murti
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects

Self Diffusion in SiC: the Role of Intrinsic Point Defects

2001 ◽  
Vol 353-356 ◽  
pp. 323-326 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects ◽  
Self Diffusion

An insight to the role of Cr in the process of intrinsic point defects in α-Al2O3

2016 ◽  
Vol 18 (9) ◽  
pp. 6734-6741 ◽  
Author(s):  
Xin Xiang ◽  
Guikai Zhang ◽  
Feilong Yang ◽  
Xuexing Peng ◽  
Tao Tang ◽  
...  
Keyword(s):  
Charge State ◽  
Point Defects ◽  
Significant Influence ◽  
Relative Stability ◽  
Equilibrium Configuration ◽  
Intrinsic Point Defects ◽  
Defect Process ◽  
Α Al2o3

Cr has significant influence on the formation, charge state, relative stability and equilibrium configuration of isolated intrinsic point defects in α-Al2O3, resulting in the variation of defect process in α-Al2O3.

Defect Engineering in SI:ER Technology

1996 ◽  
Vol 422 ◽  
Author(s):  
N. A. Sobolev ◽  
O. V. Alexandrov ◽  
M. S. Bresler ◽  
V. V. Emtsev ◽  
O. B. Gusev ◽  
...  
Keyword(s):  
Point Defects ◽  
Essential Role ◽  
Defect Formation ◽  
Defect Engineering ◽  
Intrinsic Point Defects ◽  
Related Donor ◽  
Non Equilibrium

AbstractRecent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects in Er-related defects formation for both implanted and in-diffused Si:Er structures is demonstrated.The data of electroluminescence (EL) measurements evidence that the Er3+ excitation occurs via capture of free excitons on neutral Er-related donor centers with subsequent Augerrecombination of bound excitons.

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication

2005 ◽  
Vol 108-109 ◽  
pp. 483-488 ◽  
Author(s):  
V.I. Vdovin ◽  
M.G. Mil'vidskii ◽  
M.M. Rzaev ◽  
Friedrich Schäffler
Keyword(s):  
Experimental Data ◽  
Low Temperature ◽  
Point Defects ◽  
Misfit Dislocation ◽  
Alloy Composition ◽  
Dislocation Nucleation ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Intrinsic Point Defects

We present experimental data on the effect of low-temperature buffer layers on the dislocation structure formation in SiGe/Si strained-layer heterostructures under thermal annealing. Specific subjects include mechanisms of misfit dislocation nucleation, propagation and multiplication as well as the role of intrinsic point defects in these processes. Samples with lowtemperature Si (400°C) and SiGe (250°C) buffer layers were grown by MBE. In general, the processes of MD generation occur similarly in the heterostructures studied independently of the alloy composition (Ge content: 0.15, 0.30) and kind of buffer layer. Intrinsic point defects related to the low-temperature epitaxial growth influence mainly the rate of misfit dislocation nucleation.

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping

Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon

2003 ◽  
Vol 83 (15) ◽  
pp. 3048-3050 ◽  
Author(s):  
Zhenqiang Xi ◽  
Deren Yang ◽  
Jin Xu ◽  
Yujie Ji ◽  
Duanlin Que ◽  
...  
Keyword(s):  
Point Defects ◽  
Large Diameter ◽  
Czochralski Silicon ◽  
Intrinsic Point Defects ◽  
Copper Precipitation
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