Mbe Growth and Properties of HgCdTe Long Wave and Very Long Wave Infrared Detectors

1996 ◽  
Vol 421 ◽  
Author(s):  
R. D. Rajavel ◽  
O.K. Wu ◽  
J.E. Jensen ◽  
C.A. Cockrum ◽  
G.M. Venzor ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Infrared Detectors ◽  
High Performance ◽  
Molecular Beam ◽  
State Of The Art ◽  
Optical And Electrical Properties ◽  
Significant Progress ◽  
Mbe Growth ◽  
Long Wave ◽  
Long Wave Infrared

Abstractstructural, optical and electrical properties were evaluated. Significant progress has been made toward the growth of high performance HgCdTe devices by molecular beam epitaxy. Long wave infrared detectors operating at 9.9 μm at 78K exhibited a mean RoAo product of 1170 Ωcm2 at 0-fov. Very long wave infrared detectors operating at 14 μm at 78K exhibited a mean RoA product of 3.5 Ωcm2 at f/2 fov. These values represent the state-of-the- art for molecular beam epitaxially grown HgCdTe detectors.

Properties of Modulation-Doped HgCdTe Superlattices

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Hwang ◽  
Z. Yang ◽  
Y. Lansari ◽  
J.W. Han ◽  
J.W. Cook ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Optical And Electrical Properties ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
P Type ◽  
Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

High Performance HgCdTe-Detectors Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
R. D. Rajavel ◽  
D. M. Jamba ◽  
J. E. Jensen ◽  
O. K. Wu ◽  
C. A. Cockrum ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Performance ◽  
Molecular Beam ◽  
Simultaneous Detection ◽  
Focal Plane Arrays ◽  
Long Wave ◽  
Sharp Turn ◽  
Midwave Infrared ◽  
Long Wave Infrared

ABSTRACTMolecular beam epitaxy (MBE) offers benefits such as the capability for growth of compositionally-tailored heterostructures and in-situ doping of HgCdTe alloys. These capabilities were applied to the growth of long wave infrared unispectral focal plane arrays (FPA) with 480×4 elements. The detectivity (D*) map of the FPA demonstrated performance that was higher than the specification value, with no defective channels. Two-color detectors with the n-p-n architecture, for the simultaneous detection of two closely spaced bands in the midwave infrared spectrum were also grown by MBE. These devices exhibited sharp turn-off and turn-on in both bands. The quantum efficiency was greater than 70% and average R°A values exceeded 1×106 Ω-cm2 in both bands. These result demonstrate that high performance HgCdTe devices can be grown by MBE.

Mbe Growth and Characterization of Lwir HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
M.B. Lee ◽  
J. Decarlo ◽  
D. Dimarzio ◽  
M. Kesselman
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam ◽  
High Mobility ◽  
Optical And Electrical Properties ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Hall Effect Measurements ◽  
Exafs Study

ABSTRACTWe have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements. For films of 10 to 11 µm thick and composition X value ranging from 0.152 to 0.172, the highest mobility observed was 7.5 × 105 cm2 /V-sec, and the FWHMs of the rocking curves were 75 to 110 arcsec. We also have carried out the temperature-dependent EXAFS study of HgCdTe.

Nanopillar modified high-sensitivity asymmetric Graphene-GaN photodetector

Nanoscale ◽  
2021 ◽  
Author(s):  
Chang Liu ◽  
Xiaodong Li ◽  
Tiangui Hu ◽  
Wenkai Zhu ◽  
Faguang Yan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
2D Materials ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Optical And Electrical Properties ◽  
Two Dimensional

Integration of two dimensional (2D) materials with three dimensional (3D) semiconductors reveals intriguing optical and electrical properties that surpass those of the original materials. Here we report the high performance...

High performance GaSb/InAs superlattice long-wave infrared focal plane array

2012 ◽  
Author(s):  
S. D. Gunapala ◽  
S. B. Rafol ◽  
D. Z. Ting ◽  
A. Soibel ◽  
J. K. Liu ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Array ◽  
Infrared Focal Plane Array ◽  
Long Wave ◽  
Long Wave Infrared

MAKO: a high-performance, airborne imaging spectrometer for the long-wave infrared

2010 ◽  
Author(s):  
D. W. Warren ◽  
R. H. Boucher ◽  
D. J. Gutierrez ◽  
E. R. Keim ◽  
M. G. Sivjee
Keyword(s):  
High Performance ◽  
Imaging Spectrometer ◽  
Long Wave ◽  
Airborne Imaging ◽  
Long Wave Infrared
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