Abstractstructural, optical and electrical properties were evaluated. Significant progress has been made toward the growth of high performance HgCdTe devices by molecular beam epitaxy. Long wave infrared detectors operating at 9.9 μm at 78K exhibited a mean RoAo product of 1170 Ωcm2 at 0-fov. Very long wave infrared detectors operating at 14 μm at 78K exhibited a mean RoA product of 3.5 Ωcm2 at f/2 fov. These values represent the state-of-the- art for molecular beam epitaxially grown HgCdTe detectors.
Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors