2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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9781479936151, 9781479936144

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A capacitance detection circuit for on-chip microparticle manipulation

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867083 ◽

2014 ◽

Author(s):

Rie Yamane ◽

Hirosuke Iwasaki ◽

Yoshiaki Dei ◽

Ji Cui ◽

Toshimasa Matsuoka

Keyword(s):

Detection Circuit ◽

Capacitance Detection ◽

On Chip

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Original amplifier using only emitter and base of a Si bipolar transistor

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867048 ◽

2014 ◽

Author(s):

Kensho Okamoto ◽

Junichi Fujita ◽

Masaki Ishikawa ◽

Tetsuo Hattori

Keyword(s):

Bipolar Transistor

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Magnetic field sensitivity of poly-Si Hall device improved by high voltage application

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867077 ◽

2014 ◽

Cited By ~ 3

Author(s):

Akito Yoshikawa ◽

Daiki Tadokoro ◽

Yohei Yamaguchi ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura ◽

...

Keyword(s):

Magnetic Field ◽

High Voltage ◽

Field Sensitivity ◽

Voltage Application

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Poster session

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867049 ◽

2014 ◽

Keyword(s):

Poster Session

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Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867063 ◽

2014 ◽

Author(s):

Shintaro Kodama ◽

Hirokuni Tokuda ◽

Masaaki Kuzuhara

Keyword(s):

Gate Insulator ◽

Interface Properties

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Estimation of threshold voltage from frequency of ring oscillator

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867084 ◽

2014 ◽

Author(s):

Takuya Matsumoto ◽

Hroshi Makino ◽

Tsutomu Yoshimura ◽

Shuhei Iwade ◽

Yoshio Matsuda

Keyword(s):

Threshold Voltage ◽

Ring Oscillator

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Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867088 ◽

2014 ◽

Cited By ~ 1

Author(s):

Chaiyanan Kulchaisit ◽

Mami Fujii ◽

Yoshihiro Ueoka ◽

Juan Paolo Bermundo ◽

Masahiro Horita ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Passivation Layer ◽

Amorphous Ingazno ◽

Bottom Gate

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Soft actuator using ionic polymer-metal composite driven with ionic liquid

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867092 ◽

2014 ◽

Author(s):

Hiroshi Okazaki ◽

Shigeki Sawada ◽

Tokiyoshi Matsuda ◽

Mutsumi Kimura

Keyword(s):

Ionic Liquid ◽

Metal Composite ◽

Ionic Polymer Metal Composite ◽

Ionic Polymer ◽

Soft Actuator ◽

Polymer Metal

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Artificial retina using thin-film devices driven by wireless power supply — Working confirmation of pattern recognition

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867071 ◽

2014 ◽

Author(s):

Atsushi Matsumura ◽

Takahiro Fuchiya ◽

Yoshiharu Maeda ◽

Takayuki Kadonome ◽

Takumi Tanaka ◽

...

Keyword(s):

Thin Film ◽

Pattern Recognition ◽

Power Supply ◽

Wireless Power ◽

Artificial Retina ◽

Wireless Power Supply ◽

Thin Film Devices

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Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867065 ◽

2014 ◽

Cited By ~ 2

Author(s):

S. Ohi ◽

T. Kakegami ◽

H. Tokuda ◽

M. Kuzuhara

Keyword(s):

Gan Hemt ◽

Dc Characteristics

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A capacitance detection circuit for on-chip microparticle manipulation

Original amplifier using only emitter and base of a Si bipolar transistor

Magnetic field sensitivity of poly-Si Hall device improved by high voltage application

Poster session

Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

Estimation of threshold voltage from frequency of ring oscillator

Reliability of bottom gate amorphous InGaZnO thin-film transistors with siloxane passivation layer

Soft actuator using ionic polymer-metal composite driven with ionic liquid

Artificial retina using thin-film devices driven by wireless power supply — Working confirmation of pattern recognition

Effect of passivation films on DC characteristics of AlGaN/GaN HEMT

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
Latest Publications