Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy

1993 ◽  
Vol 29 (21) ◽  
pp. 1893 ◽  
Author(s):  
J.-I. Song ◽  
W.-P. Hong ◽  
C.J. Palmstro̸m ◽  
J.R. Hayes ◽  
K.B. Chough ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Microwave Characteristics

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High

Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers

2001 ◽  
Vol 80 (1-3) ◽  
pp. 284-288 ◽  
Author(s):  
G.R. Moriarty ◽  
M. Murtagh ◽  
K. Cherkaoui ◽  
G. Gouez ◽  
P.V. Kelly ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Carbon Doped ◽  
Annealing Study

Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
Zhang Rong ◽  
Yoon Soon Fatt ◽  
Tan Kianhua ◽  
Sun Zhongzhe ◽  
Huang Qingfeng
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Base Material ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Carbon Doped ◽  
Base Current ◽  
Recombination Current

ABSTRACTThis paper reports the characteristics of GaInP/GaAs heterojunction bipolar transistor (HBT) with carbon-doped GaAs base layer grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBr4) as p-type dopant precursor. Hydrofluoric acid (HF) was used to passivate the GaInP/GaAs HBTs. At base bias voltages below 0.8V in the Gummel plot, the base current of large-area devices after HF treatment was greatly reduced. This indicates that the extrinsic base surface recombination current was greatly reduced. After HF treatment, detailed DC characterization of the device performance from 300K to 380K was carried out and the carrier transport properties were investigated. The base current and collector current ideality factors at 300K were 1.12 and 1.01, respectively. This indicates that the space- charge region recombination current in the base is insignificant. From the temperature- dependent Gummel plot, the activation energies of collector current and base current were obtained. For the collector current, the activation energy is 1.4eV, which is close to the bandgap of the GaAs base. This indicates that the collector current is determined by the drift-diffusion process, in which an energy barrier of the same magnitude as the base bandgap is to be overcome by electrons before they reach the collector. For the base current, the activation energy is also 1.4eV, which is close to the bandgap of GaAs, indicating that band-to-band recombination plays a dominant role in the base current. No trap-related recombination was observed for the base and collector currents, which further indicates the high quality carbon-doped GaAs base material for the HBT structures.

Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 235-240 ◽  
Author(s):  
F. Alexandre ◽  
D. Zerguine ◽  
P. Launay ◽  
J.L. Benchimol ◽  
M. Berz ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy

Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 464-465 ◽  
Author(s):  
Adarsh Sandhu ◽  
Toshio Fujii ◽  
Hideyasu Ando ◽  
Tsuyoshi Takahashi ◽  
Hideaki Ishikawa ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Mbe Growth ◽  
Carbon Doped ◽  
Gas Source ◽  
Gas Source Mbe

AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

1991 ◽  
Vol 27 (9) ◽  
pp. 692 ◽  
Author(s):  
T. Henderson ◽  
B. Bayraktaroglu ◽  
S. Hussien ◽  
A. Dip ◽  
P. Colter ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Atomic Layer Epitaxy ◽  
Carbon Doped

Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

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