Highly Conductive p-type Microcrystalline Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
M. Heintze ◽  
M. Schmitt
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Plasma Deposition ◽  
Growth Surface ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Positive Ions ◽  
Boron Doped ◽  
P Type

AbstractThe plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm−1 were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

scholarly journals Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

2012 ◽  
Vol 25 ◽  
pp. 34-42 ◽  
Author(s):  
Yunfeng Yin ◽  
Jidong Long ◽  
Selvaraj Venkataraj ◽  
Juan Wang ◽  
Armin G. Aberle
Keyword(s):  
Thin Films ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Silicon Thin Films ◽  
Boron Doped

POLY-SILICON THIN FILMS PREPARED BY LOW TEMPERATURE ALUMINUM-INDUCED CRYSTALLIZATION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 716-721
Author(s):  
YASUHIRO MATSUMOTO ◽  
MASAO TAMURA ◽  
RENE ASOMOZA ◽  
ZHENRUI YU
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Hall Effect Measurements ◽  
High Carrier ◽  
P Type ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

P-type poly-Si thin films prepared by low temperature Aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thicknessess were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550°C. XRD, SIMS, TEM and Hall effect measurements were carried out to characterize the annealed films. Results show that a-Si:H contacted with adequate Al could be crystallized at temperature as low as 300°C after annealing for 60 minutes. This material has high carrier concentration as well as high Hall mobility can be used as a p-layer or seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process.

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