scholarly journals Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

2012 ◽  
Vol 25 ◽  
pp. 34-42 ◽  
Author(s):  
Yunfeng Yin ◽  
Jidong Long ◽  
Selvaraj Venkataraj ◽  
Juan Wang ◽  
Armin G. Aberle
Keyword(s):  
Thin Films ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Silicon Thin Films ◽  
Boron Doped

Microcrystalline Silicon Thin Films and Triple-Junction Solar Cells

2012 ◽  
Vol 468-471 ◽  
pp. 1912-1915
Author(s):  
Hui Zhi Ren ◽  
Ying Zhao ◽  
Xiao Dan Zhang ◽  
Hong Ge ◽  
Zong Pan Wang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Triple Junction ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
High Quality ◽  
Area Efficiency ◽  
Silicon Thin Films ◽  
Deposition Parameters ◽  
Area Deposition

We report on microcrystalline silicon thin films and a-Si:H/a-SiGe:H/μc-Si:H triple-junction p-i-n solar cells deposited on large-area glass substrate. Microcrystalline silicon (μc-Si:H) bottom cells were deposited at a VHF-PECVD deposition system with 40.68MHz. It is necessary to develop the uniformity of μc-Si:H thin films for large-area deposition of high-quality triple-junction solar cells. By optimizing the deposition parameters, μc-Si:H thin films have been obtained with good thickness and very good crystalline volume fractions uniformity over the whole substrates area. The triple-junction module have been successful fabricated. The best module on 0.79 m2 size substrates has an initial total-area efficiency of 8.35%.

Highly Conductive p-type Microcrystalline Silicon Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
M. Heintze ◽  
M. Schmitt
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Plasma Deposition ◽  
Growth Surface ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Positive Ions ◽  
Boron Doped ◽  
P Type

AbstractThe plasma deposition of boron doped microcrystalline films was optimized with respect to crystallinity and doping efficiency. High room temperature conductivities up to 39 Scm−1 were achieved under condition when the energy of positive ions impinging on the growth surface is minimized.

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films
Sign in / Sign up

Export Citation Format

Share Document