Molecular Beam Epitaxial Growth of ZnSe, ZnSSe and ZnMnSSe Layers on GaAs Substrates for Blue-Green Laser Structures

1995 ◽  
Vol 417 ◽  
Author(s):  
Y. P. Chen ◽  
M. Saginur ◽  
C. C. Kim ◽  
S. Sivananthan ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Energy Gap ◽  
Three Dimensional ◽  
High Energy ◽  
Green Laser ◽  
Initial Growth ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Dimensional Growth ◽  
Molecular Beam Epitaxial Growth

AbstractSingle layers of ZnSe, ZnSxSe1−x., and Znl−y.MnySxSe1−x., were grown on the GaAs(001). Realtime reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnSxSe1−x., and Znl−y.MnySxSe1−x., (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

Molecular Beam Epitaxial Growth of InAs/AIGaAsSb Deep Quantum Wells on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
N. Kuze ◽  
H. Goto ◽  
S. Miya ◽  
S. Muramatsu ◽  
M. Matsui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
High Energy ◽  
High Electron ◽  
Quantum Well Structures ◽  
Force Microscopy ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Initial Stage ◽  
Molecular Beam Epitaxial Growth

ABSTRACTWe have investigated InAs deep quantum well structures (InAs DQWs) made from InAs/A1GaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice-matched to InAs. Using reflection high-energy electron diffraction (RHEED) linescan image analysis, we show that AlGaAsSb on GaAs surfaces quickly relaxes within 3 to 7 monolayers (MLs). The initial stages of AlxGa1-xAsSb (0≤x≤0.5) growth on GaAs (100) substrates and InAs growth on AlGaAsSb layers have been investigated by atomic force microscopy. The ridgeline shapes of AlGaAsSb are observed at the initial stage on GaAs surfaces. In the interface of the InAs/AIGaAsSb, two-dimensional (2D) growth of InAs has been observed. With a thin buffer layer of 600 nm AlGaAsSb, we have achieved very high electron mobilities of more than 32000 cm2/V-s at room temperature.

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates

1987 ◽  
Author(s):  
H. Cheng ◽  
J. M. DePuydt ◽  
J. E. Potts ◽  
S. K. Mohapatra ◽  
T. L. Smith
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth
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