Molecular Beam Epitaxial Growth of InAs/AIGaAsSb Deep Quantum Wells on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
N. Kuze ◽  
H. Goto ◽  
S. Miya ◽  
S. Muramatsu ◽  
M. Matsui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
High Energy ◽  
High Electron ◽  
Quantum Well Structures ◽  
Force Microscopy ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Initial Stage ◽  
Molecular Beam Epitaxial Growth

ABSTRACTWe have investigated InAs deep quantum well structures (InAs DQWs) made from InAs/A1GaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice-matched to InAs. Using reflection high-energy electron diffraction (RHEED) linescan image analysis, we show that AlGaAsSb on GaAs surfaces quickly relaxes within 3 to 7 monolayers (MLs). The initial stages of AlxGa1-xAsSb (0≤x≤0.5) growth on GaAs (100) substrates and InAs growth on AlGaAsSb layers have been investigated by atomic force microscopy. The ridgeline shapes of AlGaAsSb are observed at the initial stage on GaAs surfaces. In the interface of the InAs/AIGaAsSb, two-dimensional (2D) growth of InAs has been observed. With a thin buffer layer of 600 nm AlGaAsSb, we have achieved very high electron mobilities of more than 32000 cm2/V-s at room temperature.

Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110)

1991 ◽  
Vol 237 ◽  
Author(s):  
Mohan Krishnamurthy ◽  
M. Wassermeier ◽  
H. Weman ◽  
J. L. Merz ◽  
P. M. Petroffa
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Vicinal Surface ◽  
Vicinal Surfaces ◽  
Island Growth ◽  
Quantum Well Structures ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth

ABSTRACTA study of the molecular beam epitaxial (MBE) growth on singular and vicinal (110) surfaces of GaAs is presented. Quantum well structures and tilted superlattices (TSL) were grown on substrates misoriented 0.5°-2° towards the nearest [010] and [111]A azimuths at growth temperatures ranging from 450° C to 600° C under different growth conditions. The structures were characterized by Nomarski optical microscopy, transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy.Two types of faceting were observed on the surfaces. The structures grown at temperatures above 540°C and As beam fluxes below l×10-5 torr showed V-shaped facets pointing in the [001] direction and are attributed to As deficient island growth. Lower temperatures and higher As beam fluxes lead to surfaces with microfacets that are elongated along the respective step directions on the vicinal surface and are due to step bunching during growth. Their density and height decrease with decreasing vicinal angle and they disappear on the singular (110) surface. The photoluminescence of the GaAs quantum wells grown on these samples is redshifted with respect to that of the quantum wells grown on the flat surface. This is being ascribed to the fact that on the vicinal surface, the recombination takes place at the facets where the quantum wells are wider.The contrast in the TEM images of the TSL show for the samples misoriented towards [010] that the lateral segregation to the step edges on this surface is appreciable. The TSL spacing and the tilt however show that during growth the vicinal surfaces tend towards a surface with smaller miscut.

Molecular Beam Epitaxial Growth of ZnSe, ZnSSe and ZnMnSSe Layers on GaAs Substrates for Blue-Green Laser Structures

1995 ◽  
Vol 417 ◽  
Author(s):  
Y. P. Chen ◽  
M. Saginur ◽  
C. C. Kim ◽  
S. Sivananthan ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Energy Gap ◽  
Three Dimensional ◽  
High Energy ◽  
Green Laser ◽  
Initial Growth ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Dimensional Growth ◽  
Molecular Beam Epitaxial Growth

AbstractSingle layers of ZnSe, ZnSxSe1−x., and Znl−y.MnySxSe1−x., were grown on the GaAs(001). Realtime reflection high energy electron diffraction was used to study the initial growth of ZnSe(001) on GaAs(001) under different conditions. Exposure of the GaAs substrate to Se flux before growth led to three-dimensional growth, whereas exposure to Zn flux led to two dimensional-growth. ZnSxSe1−x., and Znl−y.MnySxSe1−x., (energy gap less than 2.9 eV) layers with the lattice constant closely matched to that of GaAs have been grown with a good reproducibility.

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