High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors

1995 ◽  
Vol 416 ◽  
Author(s):  
Kazushi Hayashi ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
High Quality ◽  
Chemical Vapor Deposition Reactor ◽  
Step Flow ◽  
Atomic Force ◽  
Microscope Images ◽  
Atomically Flat

ABSTRACTHigh quality diamond films have been successfully grown, by step-flow, on (001) diamond substrates using an end-launch type chemical vapor deposition reactor. Electrical properties of as-deposited diamond films as well as the surface morphology and the film crystallinity were investigated. Optical and atomic-force microscope images indicated that diamond films consisted of atomically flat terraces and macroscopic steps running parallel to [110×l and 1×2 double-domain structure. The currentvoltage characteristics of Al-Schottky contacts to these step-flow grown diamond films showed excellent rectification properties, indicating the potential of this material for electronic applications.

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Effect of Methane Concentration on the Performance of Diamond Films Prepared by MPCVD

2014 ◽  
Vol 1053 ◽  
pp. 402-406 ◽  
Author(s):  
Xi Feng Ding ◽  
Xin Sun ◽  
Wen Jing Wang ◽  
Hong Mei Zhang ◽  
Hua Na Gao
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Monocrystalline Silicon ◽  
Microwave Plasmas ◽  
High Quality ◽  
Gas Source

Diamond films were deposited by using methane and hydrogen as the gas source and utilizing the approach of chemical vapor deposition of microwave plasmas on the monocrystalline silicon piece. An analysis was also conducted to investigate the influence of methane concentration on the diamond film. When the methane concentration was set at 0.5%, the experiment turned out to have the high quality diamond film which was dense with homogeneous sizes. In condition that the methane concentration was 2.44%, the film obtained was much denser but with larger proportion of non-diamond components. In case that the methane concentration was about 0.25%, the purity of diamond film was declined while the film was inconsistent.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

The Effects of Friction and Wear on PECVD Diamond Films.

1994 ◽  
Vol 339 ◽  
Author(s):  
M. L. Languell ◽  
J. L. Davidson ◽  
J. J. Wert ◽  
M. A. George ◽  
W. E. Collins ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Friction And Wear ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nasa Lewis Research ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Diameter ◽  
Before And After ◽  
Surface Changes

ABSTRACTThe effects of friction and wear were examined on plasma enhanced chemical vapor deposition (PECVD) diamond films deposited on tungsten substrates. The tribology of diamond on diamond was studied and the changes in surface roughness and the bearing ratio were determined before and after wear. The (111) textured heteroepitaxial films were studied morphologically by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The changes in morphology involved a transition from the large as grown diamond crystallites with a mean diameter of 10 μm to a surface with grains as small as 100 nm. The nature of the wear-modified films will be discussed regarding the possible mechanisms for the surface changes.Work partially supported by NASA Lewis Research Center grant NAG3–1430.

Comparative Growth of AIN on Singular and Off-Axis 6H and 4H-SiC by MOCVD

1998 ◽  
Vol 537 ◽  
Author(s):  
S. Wilson ◽  
C. S. Dickens ◽  
J. Griffin ◽  
M. G. Spencer
Keyword(s):  
High Energy ◽  
Two Dimensional ◽  
Comparison Study ◽  
High Energy Electron ◽  
High Quality ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Atomically Flat

AbstractA comparison study of the growth of aluminum nitride (AIN) single crystal epitaxy on 6H-SiC and 4H-SiC substrates has been performed. The material has been characterized using atomic force microscopy (AFM) and reflective high energy electron diffraction (RHEED). AIN crystals were deposited on the following 6H-SiC substrates: singular with and without an initial SiC epilayer, and 3.5° off-axis with and without an initial SIC epilayer. AIN crystals were deposited on 8.0° off-axis 4H-SiC with and without initial SIC epilayers. AFM shows that the deposition of AIN on 6H-SiC and 4H-SIC with an initial SiC epilayer displays high quality quasi-two dimensional growth as atomically flat or step flow epitaxy.

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