Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films

2004 ◽  
Vol 96 (12) ◽  
pp. 7300-7305 ◽  
Author(s):  
T. Teraji ◽  
S. Yoshizaki ◽  
S. Mitani ◽  
T. Watanabe ◽  
T. Ito
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
High Quality ◽  
Single Crystalline

Laser flatting chemical vapor deposition diamond films by axial offset-focus

2013 ◽  
Vol 25 (8) ◽  
pp. 1916-1920
Author(s):  
严垒 Yan Lei ◽  
马志斌 Ma Zhibin ◽  
张璋 Zhang Zhang ◽  
邓煜恒 Deng Yuheng ◽  
王兴立 Wang Xingli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond

A study on the residual stress measurement methods on chemical vapor deposition diamond films

1998 ◽  
Vol 13 (11) ◽  
pp. 3027-3033 ◽  
Author(s):  
Jung Geun Kim ◽  
Jin Yu
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Tensile Stress ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Intrinsic Stress ◽  
Chemical Vapor Deposition Diamond

Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) dϕψ − sin2ψ, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3–4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from −0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress.

Early formation of chemical vapor deposition diamond films

1990 ◽  
Vol 57 (25) ◽  
pp. 2646-2648 ◽  
Author(s):  
Sumio Iijima ◽  
Yumi Aikawa ◽  
Kazuhiro Baba
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Early Formation

Effect of Methane Concentration on the Performance of Diamond Films Prepared by MPCVD

2014 ◽  
Vol 1053 ◽  
pp. 402-406 ◽  
Author(s):  
Xi Feng Ding ◽  
Xin Sun ◽  
Wen Jing Wang ◽  
Hong Mei Zhang ◽  
Hua Na Gao
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Monocrystalline Silicon ◽  
Microwave Plasmas ◽  
High Quality ◽  
Gas Source

Diamond films were deposited by using methane and hydrogen as the gas source and utilizing the approach of chemical vapor deposition of microwave plasmas on the monocrystalline silicon piece. An analysis was also conducted to investigate the influence of methane concentration on the diamond film. When the methane concentration was set at 0.5%, the experiment turned out to have the high quality diamond film which was dense with homogeneous sizes. In condition that the methane concentration was 2.44%, the film obtained was much denser but with larger proportion of non-diamond components. In case that the methane concentration was about 0.25%, the purity of diamond film was declined while the film was inconsistent.

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