The Effects of Friction and Wear on PECVD Diamond Films.

1994 ◽  
Vol 339 ◽  
Author(s):  
M. L. Languell ◽  
J. L. Davidson ◽  
J. J. Wert ◽  
M. A. George ◽  
W. E. Collins ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Friction And Wear ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nasa Lewis Research ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Diameter ◽  
Before And After ◽  
Surface Changes

ABSTRACTThe effects of friction and wear were examined on plasma enhanced chemical vapor deposition (PECVD) diamond films deposited on tungsten substrates. The tribology of diamond on diamond was studied and the changes in surface roughness and the bearing ratio were determined before and after wear. The (111) textured heteroepitaxial films were studied morphologically by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The changes in morphology involved a transition from the large as grown diamond crystallites with a mean diameter of 10 μm to a surface with grains as small as 100 nm. The nature of the wear-modified films will be discussed regarding the possible mechanisms for the surface changes.Work partially supported by NASA Lewis Research Center grant NAG3–1430.

Amorphous to Microcrystalline Transition in Thickness-graded Hot-Wire CVD Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
Qi Wang ◽  
John Perkins ◽  
Helio Moutinho ◽  
Bobby To ◽  
Howard M. Branz
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Dilution Ratio ◽  
Microcrystalline Silicon ◽  
Silicon Phase ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Changes

AbstractWe study the amorphous to microcrystalline silicon phase transition in hot-wire chemical vapor deposition thin-film silicon by depositing a series of unique, thickness-graded, samples on a glass substrate at 200°C. By inserting or withdrawing a motor-driven shutter during growth, we make samples that vary from 200 to about 2000 Å thick across each 5-cm along stripe. Each stripe is grown at a different dilution ratio of hydrogen to silane in the source gas. The phase composition at various locations was determined by Raman and ultraviolet-reflectivity measurements. Atomic force microscopy (AFM) images of topology reveal that the surface changes from a rather smooth a-Si phase to more granular microcrystalline-Si (rms roughness increases from 10 to 47 Å).

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

High Quality Homoepitaxial Diamond Films Grown in End-Launch Type Reactors

1995 ◽  
Vol 416 ◽  
Author(s):  
Kazushi Hayashi ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
High Quality ◽  
Chemical Vapor Deposition Reactor ◽  
Step Flow ◽  
Atomic Force ◽  
Microscope Images ◽  
Atomically Flat

ABSTRACTHigh quality diamond films have been successfully grown, by step-flow, on (001) diamond substrates using an end-launch type chemical vapor deposition reactor. Electrical properties of as-deposited diamond films as well as the surface morphology and the film crystallinity were investigated. Optical and atomic-force microscope images indicated that diamond films consisted of atomically flat terraces and macroscopic steps running parallel to [110×l and 1×2 double-domain structure. The currentvoltage characteristics of Al-Schottky contacts to these step-flow grown diamond films showed excellent rectification properties, indicating the potential of this material for electronic applications.

Growth of Diamond Films Using C3F8AND H2in A New System

1994 ◽  
Vol 349 ◽  
Author(s):  
Ping Huangfu ◽  
Zengsun Jin ◽  
Xianyi Lu ◽  
Guangtian Zou ◽  
Huaxian Xiao ◽  
...  
Keyword(s):  
Synthetic Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
Surface Pretreatment ◽  
Force Microscopy ◽  
Atomic Force ◽  
Single Crystal Diamond ◽  
New System

ABSTRACTIn the present study, the new system used C3F8and H2 as source gases. Filament-assisted chemical vapor deposition was utilized. Continuous diamond films were grown on the Si and Mo substrates without any surface pretreatment. The results of scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and atomic force microscopy measurements indicate that the films deposited on the Mo substrates are of high quality. Homoepitaxial diamond films were grown on the high pressure synthetic single crystal diamond substrates. The results show that in our experimental conditions epitaxial films were easily grown on the (111) synthetic diamond substrates and sometimes epitaxial filmse also grown on the (100) synthetic diamond substrates.

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